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quality Compact Slkor BC856B PNP transistor in SOT-23 package ideal for switching and amplifier applications factory
quality Compact Slkor BC856B PNP transistor in SOT-23 package ideal for switching and amplifier applications factory

Compact Slkor BC856B PNP transistor in SOT-23 package ideal for switching and amplifier applications

Key Attributes
Model Number: BC856B
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
DC Current Gain:
220@2mA,5V
Transition Frequency(fT):
100MHz
Vce Saturation(VCE(sat)):
500mV
Type:
PNP
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
65V
Operating Temperature:
-
Mfr. Part #:
BC856B
Package:
SOT-23
Product Description

Product Overview

The BC856-BC858 series are PNP transistors ideally suited for automatic insertion, designed for switching and AF amplifier applications. They are available in a SOT-23 package.

Product Attributes

  • Brand: SLKORMICRO (implied by website URL)
  • Transistor Type: PNP
  • Package: SOT-23

Technical Specifications

Model Parameter Symbol Test Conditions Min Max Unit
BC856 Collector-Base Voltage VCBO Ta=25 -80 V
Collector-Emitter Voltage VCEO Ta=25 -65 V
Collector cut-off current ICBO VCB= -70 V , IE=0 -0.1 A
BC857 Collector-Base Voltage VCBO Ta=25 -50 V
Collector-Emitter Voltage VCEO Ta=25 -45 V
Collector cut-off current ICBO VCB= -45 V , IE=0 -0.1 A
BC858 Collector-Base Voltage VCBO Ta=25 -30 V
Collector-Emitter Voltage VCEO Ta=25 -30 V
Collector cut-off current ICBO VCB= -25 V , IE=0 -0.1 A
Emitter-Base Voltage VEBO IE= -1A, IC=0 -5 V
Emitter cut-off current IEBO VEB= -5 V , IC=0 -0.1 A
DC current gain BC856A, 857A,858A hFE VCE= -5V,IC= -2mA 125
BC856B, 857B,858B 220
BC857C,BC858C 420
Collector-emitter saturation voltage VCE(sat) IC=-100mA,IB= -5 mA -0.5 V
Base-emitter saturation voltage VBE(sat) IC= -100mA, IB= -5mA -1.1 V
Transition frequency fT VCE= -5 V, IC= -10mA f=100MHz 100 MHz
Collector capacitance Cob VCB=-10V, f=1MHz 4.5 pF
Collector Power Dissipation PC Ta=25 625 mW
Junction Temperature TJ 150
Storage Temperature Tstg -65+150
Thermal Resistance From Junction To Ambient RJA 200 /W
Symbol Dimensions In Millimeters Dimensions In Inches
A 0.900 - 1.150 0.035 - 0.045
A1 0.000 - 0.100 0.000 - 0.004
A2 0.900 - 1.050 0.035 - 0.041
b 0.300 - 0.500 0.012 - 0.020
c 0.080 - 0.150 0.003 - 0.006
D 2.800 - 3.000 0.110 - 0.118
E 1.200 - 1.400 0.047 - 0.055
E1 2.250 - 2.550 0.089 - 0.100
e 0.950 TYP 0.037 TYP
e1 1.800 - 2.000 0.071 - 0.079
L
L1 0.300 - 0.500 0.012 - 0.020
0 - 8 0 - 8

2005211106_Slkor-BC856B_C556164.pdf

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