Low On Resistance N Channel MOSFET Siliup SP2N10T8 100V 2A Drain Current in SOT 89 Package for Power
Key Attributes
Model Number:
SP2N10T8
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
2A
RDS(on):
210mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
26pF
Number:
1 N-channel
Output Capacitance(Coss):
30pF
Pd - Power Dissipation:
1.5W
Input Capacitance(Ciss):
385pF
Gate Charge(Qg):
8.6nC@10V
Mfr. Part #:
SP2N10T8
Package:
SOT-89-3L
Product Description
Product Overview
The SP2N10T8 is a 100V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capability in a surface mount SOT-89 package. This MOSFET is suitable for applications such as battery switches and DC/DC converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: SP2N10T8
- Technology: N-Channel MOSFET
- Package: SOT-89
- Website: www.siliup.com
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 100 | V | |||
| Static Drain-Source On-Resistance | RDS(on) | @10V | 210 | m | ||
| Static Drain-Source On-Resistance | RDS(on) | @4.5V | 230 | m | ||
| Continuous Drain Current | ID | 2 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 100 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | 2 | A | |||
| Pulse Drain Current | IDM | Tested | 8 | A | ||
| Power Dissipation | PD | 1.5 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 83 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 100 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=80V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 1 | 2.1 | 3 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID =1.4A | - | 210 | 240 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID =1.3A | - | 230 | 280 | m |
| Input Capacitance | Ciss | VDS=50V , VGS=0V , f=1MHz | - | 385 | - | pF |
| Output Capacitance | Coss | - | 30 | - | ||
| Reverse Transfer Capacitance | Crss | - | 26 | - | ||
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=2A | - | 8.6 | - | nC |
| Gate-Source Charge | Qgs | - | 1.3 | - | ||
| Gate-Drain Charge | Qg d | - | 1.7 | - | ||
| Turn-On Delay Time | td(on) | VDD=50V VGS=10V , RG=1, ID=1.3A | - | 5 | - | nS |
| Turn-On Rise Time | tr | - | 18 | - | ||
| Turn-Off Delay Time | td(off) | - | 13 | - | ||
| Turn-Off Fall Time | tf | - | 29 | - | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Package Information (SOT-89) | ||||||
| Symbol | Dimensions In Millimeters | Min. | Max. | |||
| A | 1.400 | 1.600 | ||||
| b | 0.320 | 0.520 | ||||
| b1 | 0.400 | 0.580 | ||||
| c | 0.350 | 0.440 | ||||
| D | 4.400 | 4.600 | ||||
| D1 | 1.550 | REF. | ||||
| D2 | 1.750 | REF. | ||||
| E | 2.300 | 2.600 | ||||
| E1 | 3.940 | 4.250 | ||||
| E2 | 1.900 | REF. | ||||
| e | 1.500 | TYP. | ||||
| e1 | 3.000 | TYP. | ||||
| L | 0.900 | 1.200 | ||||
| 45 | ||||||
2504101957_Siliup-SP2N10T8_C41355224.pdf
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