Power Management Solutions Featuring Siliup SP20P07NJ 20V P Channel MOSFET with Fast Switching Speed

Key Attributes
Model Number: SP20P07NJ
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
45A
RDS(on):
6.6mΩ@4.5V;8mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
650mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
459pF
Number:
1 P-Channel
Output Capacitance(Coss):
460pF
Input Capacitance(Ciss):
4.6nF
Pd - Power Dissipation:
38W
Gate Charge(Qg):
46nC@4.5V
Mfr. Part #:
SP20P07NJ
Package:
PDFNWB-8L(3.3x3.3)
Product Description

Product Overview

The SP20P07NJ is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. This MOSFET offers fast switching speed and low On-Resistance, making it suitable for applications such as DC-DC converters and power management. It features 100% single pulse avalanche energy testing.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Line: SP20P07NJ
  • Technology: P-Channel MOSFET
  • Package: PDFN3X3-8L

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS -20 V
On-Resistance RDS(on) -4.5V 6.6 m
On-Resistance RDS(on) -2.5V 8 m
Continuous Drain Current ID -45 A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage VDSS -20 V
Gate-Source Voltage VGSS 12 V
Continuous Drain Current (Tc=25C) ID -45 A
Continuous Drain Current (Tc=100C) ID -30 A
Pulse Drain Current Tested IDM -160 A
Single Pulse Avalanche Energy EAS 72 mJ
Power Dissipation (Tc=25C) PD 38 W
Thermal Resistance Junction-to-Case RJC 3.3 C/W
Storage Temperature Range TSTG -55 150 C
Operating Junction Temperature Range TJ -55 150 C
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=-250uA -20 V
Drain-Source Leakage Current IDSS VDS=-16V , VGS=0V , TJ=25 -1 uA
Gate-Source Leakage Current IGSS VGS=12V , VDS=0V 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =-250uA -0.4 -0.65 -1.0 V
Static Drain-Source On-Resistance RDS(ON) VGS=-4.5V , ID=-15A 6.6 9 m
Static Drain-Source On-Resistance RDS(ON) VGS=-2.5V , ID=-12A 8 12 m
Input Capacitance Ciss VDS=-10V , VGS=0V , f=1MHz 4600 pF
Output Capacitance Coss 460 pF
Reverse Transfer Capacitance Crss 459 pF
Total Gate Charge Qg VDS=-10V , VGS=-4.5V , ID=-10A 46 nC
Gate-Source Charge Qgs 7.3
Gate-Drain Charge Qg d 10
Turn-On Delay Time Td(on) VDD=-10V, VGS=-10V ,RG=3, ID=-10A 8 nS
Rise Time Tr 59
Turn-Off Delay Time Td(off) 111
Fall Time Tf 43
Diode Forward Voltage VSD VGS=0V , IS=-1A , TJ=25 -1.2 V
Diode Continuous Current IS -45 A
Reverse recover time Trr IS=-15A, di/dt=100A/us, Tj=25 24 nS
Reverse recovery charge Qrr 13 nC
Package Information (PDFN3X3-8L)
Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max.
A 0.650 0.850 0.026 0.033
A1 0.152 REF. 0.006 REF.
A2 0~0.05 0~0.002
D 2.900 3.100 0.114 0.122
D1 2.300 2.600 0.091 0.102
E 2.900 3.100 0.114 0.122
E1 3.150 3.450 0.124 0.136
E2 1.535 1.935 0.060 0.076
b 0.200 0.400 0.008 0.016
e 0.550 0.750 0.022 0.030
L 0.300 0.500 0.012 0.020
L1 0.180 0.480 0.007 0.019
L2 0~0.100 0~0.004
L3 0~0.100 0~0.004
H 0.315 0.515 0.012 0.020
9 13 9 13

2504101957_Siliup-SP20P07NJ_C41355001.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.