Power Management Solutions Featuring Siliup SP20P07NJ 20V P Channel MOSFET with Fast Switching Speed
Product Overview
The SP20P07NJ is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. This MOSFET offers fast switching speed and low On-Resistance, making it suitable for applications such as DC-DC converters and power management. It features 100% single pulse avalanche energy testing.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: SP20P07NJ
- Technology: P-Channel MOSFET
- Package: PDFN3X3-8L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -20 | V | |||
| On-Resistance | RDS(on) | -4.5V | 6.6 | m | ||
| On-Resistance | RDS(on) | -2.5V | 8 | m | ||
| Continuous Drain Current | ID | -45 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | -20 | V | |||
| Gate-Source Voltage | VGSS | 12 | V | |||
| Continuous Drain Current (Tc=25C) | ID | -45 | A | |||
| Continuous Drain Current (Tc=100C) | ID | -30 | A | |||
| Pulse Drain Current Tested | IDM | -160 | A | |||
| Single Pulse Avalanche Energy | EAS | 72 | mJ | |||
| Power Dissipation (Tc=25C) | PD | 38 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 3.3 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -20 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-16V , VGS=0V , TJ=25 | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -0.4 | -0.65 | -1.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-15A | 6.6 | 9 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-2.5V , ID=-12A | 8 | 12 | m | |
| Input Capacitance | Ciss | VDS=-10V , VGS=0V , f=1MHz | 4600 | pF | ||
| Output Capacitance | Coss | 460 | pF | |||
| Reverse Transfer Capacitance | Crss | 459 | pF | |||
| Total Gate Charge | Qg | VDS=-10V , VGS=-4.5V , ID=-10A | 46 | nC | ||
| Gate-Source Charge | Qgs | 7.3 | ||||
| Gate-Drain Charge | Qg d | 10 | ||||
| Turn-On Delay Time | Td(on) | VDD=-10V, VGS=-10V ,RG=3, ID=-10A | 8 | nS | ||
| Rise Time | Tr | 59 | ||||
| Turn-Off Delay Time | Td(off) | 111 | ||||
| Fall Time | Tf | 43 | ||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| Diode Continuous Current | IS | -45 | A | |||
| Reverse recover time | Trr | IS=-15A, di/dt=100A/us, Tj=25 | 24 | nS | ||
| Reverse recovery charge | Qrr | 13 | nC | |||
| Package Information (PDFN3X3-8L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.650 | 0.850 | 0.026 | 0.033 | ||
| A1 | 0.152 REF. | 0.006 REF. | ||||
| A2 | 0~0.05 | 0~0.002 | ||||
| D | 2.900 | 3.100 | 0.114 | 0.122 | ||
| D1 | 2.300 | 2.600 | 0.091 | 0.102 | ||
| E | 2.900 | 3.100 | 0.114 | 0.122 | ||
| E1 | 3.150 | 3.450 | 0.124 | 0.136 | ||
| E2 | 1.535 | 1.935 | 0.060 | 0.076 | ||
| b | 0.200 | 0.400 | 0.008 | 0.016 | ||
| e | 0.550 | 0.750 | 0.022 | 0.030 | ||
| L | 0.300 | 0.500 | 0.012 | 0.020 | ||
| L1 | 0.180 | 0.480 | 0.007 | 0.019 | ||
| L2 | 0~0.100 | 0~0.004 | ||||
| L3 | 0~0.100 | 0~0.004 | ||||
| H | 0.315 | 0.515 | 0.012 | 0.020 | ||
| 9 | 13 | 9 | 13 | |||
2504101957_Siliup-SP20P07NJ_C41355001.pdf
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