High Current Dual N Channel MOSFET Siliup SP2002KDTW with Low On Resistance and Surface Mount Package
Key Attributes
Model Number:
SP2002KDTW
Product Custom Attributes
Pd - Power Dissipation:
200mW
Configuration:
-
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
750mA
RDS(on):
250mΩ@4.5V;350mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
650mV@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
9pF
Number:
2 N-Channel
Output Capacitance(Coss):
19pF
Input Capacitance(Ciss):
35pF
Gate Charge(Qg):
800pC@4.5V
Mfr. Part #:
SP2002KDTW
Package:
SOT-363
Product Description
Product Overview
The SP2002KDTW is a 20V Dual N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this device is ESD protected (2KV) and features a surface mount package. It is suitable for applications such as battery switches and DC/DC converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: SP2002KDTW
- Package Type: SOT-363
- Channel Type: Dual N-Channel MOSFET
- ESD Protection: 2KV
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 20 | V | |||
| Static Drain-Source On-Resistance | RDS(on) | @4.5V | 250 | m | ||
| Static Drain-Source On-Resistance | RDS(on) | @2.5V | 350 | m | ||
| Continuous Drain Current | ID | 0.75 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 20 | V | |||
| Gate-Source Voltage | VGSS | 12 | V | |||
| Continuous Drain Current | ID | 0.75 | A | |||
| Pulse Drain Current | IDM | Tested | 3 | A | ||
| Power Dissipation | PD | 200 | mW | |||
| Thermal Resistance Junction-to-Ambient | RJA | 625 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 20 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=16V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | - | - | 10 | uA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 0.30 | 0.65 | 1.00 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=500mA | - | 250 | 380 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=2.5V , ID=500mA | - | 350 | 450 | m |
| Input Capacitance | Ciss | VDS=10V , VGS=0V , f=1MHz | - | 35 | - | pF |
| Output Capacitance | Coss | - | 19 | - | ||
| Reverse Transfer Capacitance | Crss | - | 9 | - | ||
| Total Gate Charge | Qg | VDS=10V , VGS=4.5V , ID=500mA | - | 0.8 | - | nC |
| Gate-Source Charge | Qgs | - | 0.3 | - | ||
| Gate-Drain Charge | Qg | - | 0.16 | - | ||
| Turn-On Delay Time | td(on) | VDD=10V VGS=4.5V , RG=10 , ID=500mA | - | 4 | - | nS |
| Turn-On Rise Time | tr | - | 19 | - | ||
| Turn-Off Delay Time | td(off) | - | 10 | - | ||
| Turn-Off Fall Time | tf | - | 21 | - | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Package Information (Dimensions In Millimeters) | ||||||
| Symbol | Min. | Max. | ||||
| A | 0.90 | 1.00 | ||||
| A1 | 0.00 | 0.10 | ||||
| B | 0.10 | 0.30 | ||||
| b1 | 1.30 | |||||
| D | 1.80 | 2.20 | ||||
| E | 2.00 | 2.20 | ||||
| E1 | 1.15 | 1.35 | ||||
| e | 0.65 TYP. | |||||
| L | 0.10 | 0.25 | ||||
| L1 | 0.15 | 0.4 | ||||
| Order Information | Device | Package | Unit/Tape |
|---|---|---|---|
| SP2002KDTW | SP2002KDTW | SOT-363 | 3000 |
2504101957_Siliup-SP2002KDTW_C41355127.pdf
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