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quality PNP transistor Slkor MMBT2907AT small SOT523 package suitable for switching and amplification circuits factory
quality PNP transistor Slkor MMBT2907AT small SOT523 package suitable for switching and amplification circuits factory

PNP transistor Slkor MMBT2907AT small SOT523 package suitable for switching and amplification circuits

Key Attributes
Model Number: MMBT2907AT
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
5V
DC Current Gain:
300@150mA,10V
Transition Frequency(fT):
200MHz
Type:
PNP
Vce Saturation(VCE(sat)):
1.6V@500mA,50mA
Pd - Power Dissipation:
150mW
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
60V
Mfr. Part #:
MMBT2907AT
Package:
SOT-523
Product Description

Product Overview

The MMBT2907AT is a PNP transistor designed for general-purpose applications. It is complementary to the MMBT2222AT and is supplied in a small SOT-523 package. This device offers a high DC current gain and is suitable for various switching and amplification circuits.

Product Attributes

  • Brand: SLKORMICRO
  • Model: MMBT2907AT
  • Type: PNP Transistor
  • Package: SOT-523
  • Complementary To: MMBT2222AT

Technical Specifications

Parameter Symbol Rating / Conditions Unit
Absolute Maximum Ratings (Ta = 25)
Collector - Base Voltage VCBO -60 V
Collector - Emitter Voltage VCEO -60 V
Emitter - Base Voltage VEBO -5 V
Collector Current - Continuous IC -600 mA
Collector Power Dissipation PC 150 mW
Thermal Resistance, Junction to Ambient RJA 833 C/W
Junction Temperature TJ 150 C
Storage Temperature Range Tstg -55 to 150 C
Electrical Characteristics (Ta = 25)
Collector-base breakdown voltage VCBO Ic= -100 A IE= 0 -60
Collector- emitter breakdown voltage VCEO Ic= -10 mA IB= 0 -60
Emitter - base breakdown voltage VEBO IE= -100A IC= 0 -5
Collector-base cut-off current ICBO VCB= -50 V , IE= 0 -100 nA
Emitter cut-off current IEBO VEB= -5V , IC=0 -100 nA
Base - emitter saturation voltage VBE(sat) IC=-150 mA, IB=-15mA -0.4 to -1.3 V
IC= -500 mA, IB= -50mA -1.6 to -2.6 V
DC current gain hFE VCE= -10V, IC=- 0.1mA 75
VCE= -10V, IC= -1mA 100
VCE= -10V, IC=- 10mA 100
VCE= -10V, IC= -150mA 100 - 300
VCE= -10V, IC= -500mA 50
Collector-emitter saturation voltage VCE(sat) VCC=-30V,IC=-150mA, IB1=-15mA 1 V
VCC=6V, IC=-150mA, IB1=IB2=-15mA 2 V
Delay time td 10 nS
Rise time tr 40 nS
Storage time ts 225 nS
Fall time tf 30 nS
Emitter input capacitance Cib VEB= -2V, IC= 0,f=1MHz 30 pF
Collector output capacitance Cob VCB= -10V, IE= 0,f=1MHz 8 pF
Transition frequency fT VCE= -20V, IC= -50mA,f=100MHz 200 MHz
Simplified outline(SOT-523) Dimensions (mm)
A A1 bp c
0.30 0.10 0.45 0.15
D E e1 e
0.30 0.30 0.95 0.50
HE Lp Q w
1.8 0.2 0.23 0.13
DIMENSIONS (mm are the original dimensions)
Pin 1 Base
Pin 2 Emitter
Pin 3 Collector

2410010103_Slkor-MMBT2907AT_C33962528.pdf

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