Low On Resistance 40V N Channel MOSFET Siliup SP40N11NJ for Power Management and DC DC Conversion

Key Attributes
Model Number: SP40N11NJ
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
25A
Operating Temperature -:
-55℃~+150℃
RDS(on):
11mΩ@10V;14mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
96pF
Number:
1 N-channel
Output Capacitance(Coss):
109pF
Pd - Power Dissipation:
16W
Input Capacitance(Ciss):
1.013nF
Gate Charge(Qg):
22.9nC@4.5V
Mfr. Part #:
SP40N11NJ
Package:
PDFNWB-8L(3.3x3.3)
Product Description

Product Overview

The SP40N11NJ is a 40V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers fast switching speeds and low on-resistance, with typical RDS(on) values of 11m at 10V and 14m at 4.5V. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for applications such as DC-DC converters and power management. It comes in a PDFN3X3-8L package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Type: N-Channel MOSFET
  • Model: SP40N11NJ
  • Package: PDFN3X3-8L
  • Device Code: 40N11

Technical Specifications

Parameter Symbol Conditions Rating Unit
Product Summary
Drain-Source Voltage V(BR)DSS 40 V
On-Resistance (Typ.) RDS(on)TYP @10V 11 m
On-Resistance (Typ.) RDS(on)TYP @4.5V 14 m
Continuous Drain Current ID 25 A
Absolute Maximum Ratings
Drain-Source Voltage VDSS (Ta=25, unless otherwise noted) 40 V
Gate-Source Voltage VGSS (Ta=25, unless otherwise noted) 20 V
Continuous Drain Current ID (Tc=25C) 25 A
Continuous Drain Current ID (Tc=100C) 17 A
Pulse Drain Current IDM Tested 100 A
Single Pulse Avalanche Energy EAS 20 mJ
Power Dissipation PD (Tc=25C) 16 W
Thermal Resistance Junction-to-Case RJC 7.9 C/W
Storage Temperature Range TSTG -55 to 150 C
Operating Junction Temperature Range TJ -55 to 150 C
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 40 V
Drain-Source Leakage Current IDSS VDS=32V , VGS=0V , TJ=25 - 1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1.0 1.5 2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=8A - 11 14 m
Static Drain-Source On-Resistance RDS(ON) VGS=4.5V, ID=4A - 14 20 m
Input Capacitance Ciss VDS=15V , VGS=0V , f=1MHz - 1013 - pF
Output Capacitance Coss - 109 - pF
Reverse Transfer Capacitance Crss - 96 - pF
Total Gate Charge Qg VDS=15V , VGS=4.5V , ID=8A - 22.9 - nC
Gate-Source Charge Qgs - 3.5 - nC
Gate-Drain Charge Qg d - 5.3 - nC
Turn-On Delay Time Td(on) VDD=15V VGS=10V , RG=1.5, ID=8A - 5.5 - nS
Rise Time Tr - 14 - nS
Turn-Off Delay Time Td(off) - 24 - nS
Fall Time Tf - 12 - nS
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 25 A
Reverse recover time Trr IS=10A, di/dt=100A/us, Tj=25 - 12 - nS
Reverse recovery charge Qrr - 5 - nC
Package Information (PDFN3X3-8L)
Symbol Dimensions In Millimeters Dimensions In Inches Min. Max.
A 0.650 - 0.850 0.026 - 0.033
A1 0.152 REF. 0.006 REF.
A2 0 ~ 0.05 0 ~ 0.002
D 2.900 - 3.100 0.114 - 0.122
D1 2.300 - 2.600 0.091 - 0.102
E 2.900 - 3.100 0.114 - 0.122
E1 3.150 - 3.450 0.124 - 0.136
E2 1.535 - 1.935 0.060 - 0.076
b 0.200 - 0.400 0.008 - 0.016
e 0.550 - 0.750 0.022 - 0.030
L 0.300 - 0.500 0.012 - 0.020
L1 0.180 - 0.480 0.007 - 0.019
L2 0 ~ 0.100 0 ~ 0.004
L3 0 ~ 0.100 0 ~ 0.004
H 0.315 - 0.515 0.012 - 0.020
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2504101957_Siliup-SP40N11NJ_C41355050.pdf

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