Low On Resistance 40V N Channel MOSFET Siliup SP40N11NJ for Power Management and DC DC Conversion
Product Overview
The SP40N11NJ is a 40V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers fast switching speeds and low on-resistance, with typical RDS(on) values of 11m at 10V and 14m at 4.5V. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for applications such as DC-DC converters and power management. It comes in a PDFN3X3-8L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: N-Channel MOSFET
- Model: SP40N11NJ
- Package: PDFN3X3-8L
- Device Code: 40N11
Technical Specifications
| Parameter | Symbol | Conditions | Rating | Unit | ||
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 40 | V | |||
| On-Resistance (Typ.) | RDS(on)TYP | @10V | 11 | m | ||
| On-Resistance (Typ.) | RDS(on)TYP | @4.5V | 14 | m | ||
| Continuous Drain Current | ID | 25 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | (Ta=25, unless otherwise noted) | 40 | V | ||
| Gate-Source Voltage | VGSS | (Ta=25, unless otherwise noted) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25C) | 25 | A | ||
| Continuous Drain Current | ID | (Tc=100C) | 17 | A | ||
| Pulse Drain Current | IDM | Tested | 100 | A | ||
| Single Pulse Avalanche Energy | EAS | 20 | mJ | |||
| Power Dissipation | PD | (Tc=25C) | 16 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 7.9 | C/W | |||
| Storage Temperature Range | TSTG | -55 to 150 | C | |||
| Operating Junction Temperature Range | TJ | -55 to 150 | C | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 40 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=32V , VGS=0V , TJ=25 | - | 1 | uA | |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | 100 | nA | |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=8A | - | 11 | 14 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=4A | - | 14 | 20 | m |
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - | 1013 | - | pF |
| Output Capacitance | Coss | - | 109 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 96 | - | pF | |
| Total Gate Charge | Qg | VDS=15V , VGS=4.5V , ID=8A | - | 22.9 | - | nC |
| Gate-Source Charge | Qgs | - | 3.5 | - | nC | |
| Gate-Drain Charge | Qg d | - | 5.3 | - | nC | |
| Turn-On Delay Time | Td(on) | VDD=15V VGS=10V , RG=1.5, ID=8A | - | 5.5 | - | nS |
| Rise Time | Tr | - | 14 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 24 | - | nS | |
| Fall Time | Tf | - | 12 | - | nS | |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 25 | A | |
| Reverse recover time | Trr | IS=10A, di/dt=100A/us, Tj=25 | - | 12 | - | nS |
| Reverse recovery charge | Qrr | - | 5 | - | nC | |
| Package Information (PDFN3X3-8L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | ||
| A | 0.650 - 0.850 | 0.026 - 0.033 | ||||
| A1 | 0.152 REF. | 0.006 REF. | ||||
| A2 | 0 ~ 0.05 | 0 ~ 0.002 | ||||
| D | 2.900 - 3.100 | 0.114 - 0.122 | ||||
| D1 | 2.300 - 2.600 | 0.091 - 0.102 | ||||
| E | 2.900 - 3.100 | 0.114 - 0.122 | ||||
| E1 | 3.150 - 3.450 | 0.124 - 0.136 | ||||
| E2 | 1.535 - 1.935 | 0.060 - 0.076 | ||||
| b | 0.200 - 0.400 | 0.008 - 0.016 | ||||
| e | 0.550 - 0.750 | 0.022 - 0.030 | ||||
| L | 0.300 - 0.500 | 0.012 - 0.020 | ||||
| L1 | 0.180 - 0.480 | 0.007 - 0.019 | ||||
| L2 | 0 ~ 0.100 | 0 ~ 0.004 | ||||
| L3 | 0 ~ 0.100 | 0 ~ 0.004 | ||||
| H | 0.315 - 0.515 | 0.012 - 0.020 | ||||
| 9 - 13 | 9 - 13 | |||||
2504101957_Siliup-SP40N11NJ_C41355050.pdf
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