PDFN5X6 8L Package MOSFET Siliup SP60N13DNK 60V Dual N Channel ROHS Compliant Halogen Free Tested for Avalanche Energy

Key Attributes
Model Number: SP60N13DNK
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
45A
Operating Temperature -:
-55℃~+150℃
RDS(on):
13mΩ@10V;17mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Number:
2 N-Channel
Reverse Transfer Capacitance (Crss@Vds):
116pF
Output Capacitance(Coss):
130pF
Pd - Power Dissipation:
55W
Input Capacitance(Ciss):
2.403nF
Gate Charge(Qg):
39nC@10V
Mfr. Part #:
SP60N13DNK
Package:
PDFNWB-8L(5x6)
Product Description

Product Overview

The SP60N13DNK is a 60V Dual N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-performance applications, it features fast switching speeds and a surface mount PDFN5X6-8L package. This MOSFET is ROHS Compliant & Halogen-Free and has undergone 100% Single Pulse avalanche energy testing. It is ideal for use in DC-DC converters and motor control applications.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Model: SP60N13DNK
  • Package: PDFN5X6-8L
  • Compliance: ROHS Compliant & Halogen-Free
  • Testing: 100% Single Pulse avalanche energy Test
  • Device Code: 60N13D

Technical Specifications

Parameter Symbol Conditions Rating Unit
Drain-Source Breakdown Voltage V(BR)DSS - 60 V
Static Drain-Source On-Resistance RDS(on)TYP @10V 13 m
Static Drain-Source On-Resistance RDS(on)TYP @4.5V 17 m
Continuous Drain Current ID @10V 45 A
Drain-Source Voltage VDSS (Ta=25) 60 V
Gate-Source Voltage VGSS (Ta=25) 20 V
Continuous Drain Current ID (Tc=25C) 45 A
Continuous Drain Current ID (Tc=100C) 30 A
Pulse Drain Current IDM Tested 180 A
Single pulsed avalanche energy EAS (VDD=30V,VGS =10V,L = 0.5mH, Rg=25) 125 mJ
Power Dissipation PD (Tc=25C) 55 W
Thermal Resistance Junction-to-Case RJC - 2.3 C/W
Storage Temperature Range TSTG - -55 to 150 C
Operating Junction Temperature Range TJ - -55 to 150 C
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 60 V
Drain-Source Leakage Current IDSS VDS=48V , VGS=0V , TJ=25 - 1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1.0 - 2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS =10V, ID =20A - 13 - 18 m
Static Drain-Source On-Resistance RDS(ON) VGS =4.5V, ID =20A - 17 - 25 m
Input Capacitance Ciss VDS=30V , VGS=0V , f=1MHz - 2403 - pF
Output Capacitance Coss - - 130 - pF
Reverse Transfer Capacitance Crss - - 116 - pF
Total Gate Charge Qg VDS=30V , VGS=10V , ID=10A - 39 - nC
Gate-Source Charge Qgs - - 5.6 - nC
Gate-Drain Charge Qg - - 9.5 - nC
Turn-On Delay Time Td(on) VDD=30V, VGS=10V , RG=3, ID=10A - 7.8 - nS
Rise Time Tr - - 48 - nS
Turn-Off Delay Time Td(off) - - 28 - nS
Fall Time Tf - - 30 - nS
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - - 45 A
Reverse recover time Trr IS=20A, di/dt=100A/us, TJ=25 - 19 - nS
Reverse recovery charge Qrr - - 84 - nC

Package Information

Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 0.900 1.000 0.035 0.039
A3 0.254 REF. 0.010 REF.
D 4.944 5.096 0.195 0.201
E 5.974 6.126 0.235 0.241
D1 1.470 1.870 0.058 0.074
D2 0.470 0.870 0.019 0.034
E1 3.375 3.575 0.133 0.141
D3 4.824 4.976 0.190 0.196
E2 5.674 5.826 0.223 0.229
k 1.190 1.390 0.047 0.055
b 0.350 0.450 0.014 0.018
e 1.270 TYP. 0.050 TYP.
L 0.559 0.711 0.022 0.028
L1 0.424 0.576 0.017 0.023
H 0.574 0.726 0.023 0.029
10 12 10 12

2504101957_Siliup-SP60N13DNK_C41355074.pdf

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