PDFN5X6 8L Package MOSFET Siliup SP60N13DNK 60V Dual N Channel ROHS Compliant Halogen Free Tested for Avalanche Energy
Product Overview
The SP60N13DNK is a 60V Dual N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-performance applications, it features fast switching speeds and a surface mount PDFN5X6-8L package. This MOSFET is ROHS Compliant & Halogen-Free and has undergone 100% Single Pulse avalanche energy testing. It is ideal for use in DC-DC converters and motor control applications.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Model: SP60N13DNK
- Package: PDFN5X6-8L
- Compliance: ROHS Compliant & Halogen-Free
- Testing: 100% Single Pulse avalanche energy Test
- Device Code: 60N13D
Technical Specifications
| Parameter | Symbol | Conditions | Rating | Unit | |
|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | - | 60 | V | |
| Static Drain-Source On-Resistance | RDS(on)TYP | @10V | 13 | m | |
| Static Drain-Source On-Resistance | RDS(on)TYP | @4.5V | 17 | m | |
| Continuous Drain Current | ID | @10V | 45 | A | |
| Drain-Source Voltage | VDSS | (Ta=25) | 60 | V | |
| Gate-Source Voltage | VGSS | (Ta=25) | 20 | V | |
| Continuous Drain Current | ID | (Tc=25C) | 45 | A | |
| Continuous Drain Current | ID | (Tc=100C) | 30 | A | |
| Pulse Drain Current | IDM | Tested | 180 | A | |
| Single pulsed avalanche energy | EAS | (VDD=30V,VGS =10V,L = 0.5mH, Rg=25) | 125 | mJ | |
| Power Dissipation | PD | (Tc=25C) | 55 | W | |
| Thermal Resistance Junction-to-Case | RJC | - | 2.3 | C/W | |
| Storage Temperature Range | TSTG | - | -55 to 150 | C | |
| Operating Junction Temperature Range | TJ | - | -55 to 150 | C | |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 60 | V | |
| Drain-Source Leakage Current | IDSS | VDS=48V , VGS=0V , TJ=25 | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 - 2.5 | V | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V, ID =20A | - 13 - 18 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =4.5V, ID =20A | - 17 - 25 | m | |
| Input Capacitance | Ciss | VDS=30V , VGS=0V , f=1MHz | - 2403 - | pF | |
| Output Capacitance | Coss | - | - 130 - | pF | |
| Reverse Transfer Capacitance | Crss | - | - 116 - | pF | |
| Total Gate Charge | Qg | VDS=30V , VGS=10V , ID=10A | - 39 - | nC | |
| Gate-Source Charge | Qgs | - | - 5.6 - | nC | |
| Gate-Drain Charge | Qg | - | - 9.5 - | nC | |
| Turn-On Delay Time | Td(on) | VDD=30V, VGS=10V , RG=3, ID=10A | - 7.8 - | nS | |
| Rise Time | Tr | - | - 48 - | nS | |
| Turn-Off Delay Time | Td(off) | - | - 28 - | nS | |
| Fall Time | Tf | - | - 30 - | nS | |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - - 1.2 | V | |
| Maximum Body-Diode Continuous Current | IS | - | - - 45 | A | |
| Reverse recover time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - 19 - | nS | |
| Reverse recovery charge | Qrr | - | - 84 - | nC |
Package Information
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 0.900 | 1.000 | 0.035 | 0.039 |
| A3 | 0.254 REF. | 0.010 REF. | ||
| D | 4.944 | 5.096 | 0.195 | 0.201 |
| E | 5.974 | 6.126 | 0.235 | 0.241 |
| D1 | 1.470 | 1.870 | 0.058 | 0.074 |
| D2 | 0.470 | 0.870 | 0.019 | 0.034 |
| E1 | 3.375 | 3.575 | 0.133 | 0.141 |
| D3 | 4.824 | 4.976 | 0.190 | 0.196 |
| E2 | 5.674 | 5.826 | 0.223 | 0.229 |
| k | 1.190 | 1.390 | 0.047 | 0.055 |
| b | 0.350 | 0.450 | 0.014 | 0.018 |
| e | 1.270 TYP. | 0.050 TYP. | ||
| L | 0.559 | 0.711 | 0.022 | 0.028 |
| L1 | 0.424 | 0.576 | 0.017 | 0.023 |
| H | 0.574 | 0.726 | 0.023 | 0.029 |
| 10 | 12 | 10 | 12 |
2504101957_Siliup-SP60N13DNK_C41355074.pdf
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