amplification and switching transistors Slkor MMDT4413 complementary pair NPN PNP in SOT363 package
Key Attributes
Model Number:
MMDT4413
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
DC Current Gain:
300@150mA,1V
Transition Frequency(fT):
250MHz
Number:
1 NPN + 1 PNP
Vce Saturation(VCE(sat)):
750mV@500mA,50mA
Type:
NPN+PNP
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMDT4413
Package:
SOT-363
Product Description
Product Overview
The MMDT4413 is a complementary pair of NPN (4401-type) and PNP (4403-type) silicon epitaxial planar transistors. These devices are constructed using an epitaxial planar die and are ideally suited for low power amplification and switching applications. They offer a range of electrical characteristics and are provided in a compact SOT-363 package.
Product Attributes
- Construction: Epitaxial Planar Die
- Type: Complementary Pair (NPN/PNP)
- Package: SOT-363
Technical Specifications
| NPN 4401 Section | |||
|---|---|---|---|
| Symbol | Parameter | Value | Units |
| VCBO | Collector-Base Voltage | 60 | V |
| VCEO | Collector-Emitter Voltage | 40 | V |
| VEBO | Emitter-Base Voltage | 6 | V |
| IC | Collector Current - Continuous | 0.6 | A |
| PC | Collector Power Dissipation | 0.2 | W |
| RJA | Thermal Resistance from Junction to Ambient | 625 | /W |
| TJ,Tstg | Operation Junction and Storage Temperature Range | -55 ~ +150 | |
| NPN 4401 Section - Electrical Characteristics (Ta = 25) | |||||
|---|---|---|---|---|---|
| Symbol | Parameter | Test conditions | Min | Max | Unit |
| V(BR)CBO | Collector-base breakdown voltage | IC= 100 A, IE=0 | 60 | V | |
| V(BR)CEO | Collector-emitter breakdown voltage | IC= 1mA, IB=0 | 40 | V | |
| V(BR)EBO | Emitter-base breakdown voltage | IE= 100 A, IC=0 | 6 | V | |
| ICBO | Collector cut-off current | VCB= 50 V , IE=0 | 0.1 | A | |
| ICEO | Collector cut-off current | VCE= 35 V , IB=0 | 0.5 | A | |
| IEBO | Emitter cut-off current | VEB=5V , IC=0 | 0.1 | A | |
| hFE(1) | DC current gain | VCE=1V, IC= 0.1mA | 20 | ||
| hFE(2) | VCE=1V, IC= 1mA | 40 | |||
| hFE(3) | VCE=1V, IC= 10mA | 80 | |||
| hFE(4) | VCE=1V, IC= 150mA | 100 | 300 | ||
| hFE(5) | VCE=2V, IC= 500mA | 40 | |||
| VCE(sat)1 | Collector-emitter saturation voltage | IC=150 mA, IB= 15mA | 0.4 | V | |
| VCE(sat)2 | IC=500 mA, IB= 50mA | 0.75 | V | ||
| VBE(sat)1 | Base-emitter saturation voltage | IC= 150 mA, IB= 15mA | 0.75 | 0.95 | V |
| VBE(sat)2 | IC= 500 mA, IB= 50mA | 1.2 | V | ||
| fT | Transition frequency | VCE= 10V,IC= 20mA,f=100MHz | 250 | MHz | |
| Cob | Output Capacitance | VCB=5V, IE= 0,f=1MHz | 6.5 | pF | |
| td | Delay time | 15 | nS | ||
| tr | Rise time | VCC=30V, VBE=2.0V,IC=150mA ,IB1=15mA | 20 | nS | |
| tS | Storage time | 225 | nS | ||
| tf | Fall time | VCC=30V, IC=150mA,IB1=- IB2= 15mA | 30 | nS | |
| PNP 4403 Section | |||
|---|---|---|---|
| Symbol | Parameter | Value | Units |
| VCBO | Collector-Base Voltage | -40 | V |
| VCEO | Collector-Emitter Voltage | -40 | V |
| VEBO | Emitter-Base Voltage | -5 | V |
| IC | Collector Current - Continuous | -0.6 | A |
| PC | Collector Power Dissipation | 0.2 | W |
| RJA | Thermal Resistance from Junction to Ambient | 625 | /W |
| TJ,Tstg | Operation Junction and Storage Temperature Range | -55 ~ +150 | |
| PNP 4403 Section - Electrical Characteristics (Ta = 25) | |||||
|---|---|---|---|---|---|
| Symbol | Parameter | Test conditions | Min | Max | Unit |
| V(BR)CBO | Collector-base breakdown voltage | IC= -100A , IE=0 | -40 | V | |
| V(BR)CEO | Collector-emitter breakdown voltage | IC= -1mA , IB=0 | -40 | V | |
| V(BR)EBO | Emitter-base breakdown voltage | IE= -100A, IC=0 | -5 | V | |
| ICBO | Collector cut-off current | VCB= -50 V , IE=0 | -0.1 | A | |
| ICEO | Collector cut-off current | VCE= -35 V , IB=0 | -0.5 | A | |
| IEBO | Emitter cut-off current | VEB= -5V , IC=0 | -0.1 | A | |
| hFE(1) | DC current gain | VCE= -1 V, IC= -0.1mA | 30 | ||
| hFE(2) | VCE= -1 V, IC= -1mA | 60 | |||
| hFE(3) | VCE= -1 V, IC= -10mA | 100 | |||
| hFE(4) | VCE= -2 V, IC= -150mA | 100 | 300 | ||
| hFE(5) | VCE= -2 V, IC= -500mA | 20 | |||
| VCE(sat)1 | Collector-emitter saturation voltage | IC= -150 mA, IB= -15mA | -0.4 | V | |
| VCE(sat)2 | IC= -500 mA, IB= -50mA | -0.75 | V | ||
| VBE(sat)1 | Base-emitter saturation voltage | IC= -150 mA, IB= -15mA | -0.75 | -0.95 | V |
| VBE(sat)2 | IC= -500 mA, IB= -50mA | -1.3 | V | ||
| fT | Transition frequency | VCE= -10V, IC= -20mA f = 100MHz | 200 | MHz | |
| Cob | Output Capacitance | VCB= -10V, IE= 0 f=1MHz | 8.5 | pF | |
| td | Delay time | 15 | nS | ||
| tr | Rise time | VCC= -30V, VBE= -2V IC= -150mA , IB1= -15mA | 20 | nS | |
| tS | Storage time | 225 | nS | ||
| tf | Fall time | VCC= -30V, IC= -150mA IB1=- IB2= -15mA | 30 | nS | |
| SOT-363 Package Dimensions | |||
|---|---|---|---|
| Symbol | Parameter | Value | Units |
| A | 2.2 | mm | |
| A1 | 0.30 | mm | |
| Lp | 1.35 | mm | |
| Q | 0.65 | e | |
| X | 1.3 | mm | |
| HE | 2.2 | mm | |
| v | 0.2 | mm | |
| w | 0.2 | mm | |
| b | 1.8 | mm | |
| p | 0.25 | mm | |
| e1 | 0.10 | mm | |
| D | 2.0 | mm | |
| E | 0.15 | mm | |
| y | 0.1 | mm | |
| M | 0.45 | mm | |
| A | 1.1 | mm | |
| B | 0.8 | mm | |
2309281726_Slkor-MMDT4413_C18208593.pdf
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