High current 60 Amp N Channel MOSFET Siliup SP20N05TH optimized for high frequency power conversion
Key Attributes
Model Number:
SP20N05TH
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
750mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
198pF
Number:
1 N-channel
Output Capacitance(Coss):
278pF
Input Capacitance(Ciss):
2nF
Pd - Power Dissipation:
37W
Gate Charge(Qg):
27nC@10V
Mfr. Part #:
SP20N05TH
Package:
TO-252
Product Description
Product Overview
The SP20N05TH is a 20V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low Rdson, making it ideal for high-frequency switching and synchronous rectification applications such as DC-DC converters. This device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP20N05TH
- Device Code: 20N05
- Channel Type: N-Channel
- Package Type: TO-252
Technical Specifications
| Product Summary | |||
| V(BR)DSS | RDS(on)TYP | ID | Applications |
| 20V | 4.8m@4.5V 6.2m@2.5V | 60A | DC-DC Converter High-frequency switching Synchronous rectification |
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | |||
| Parameter | Symbol | Rating | Units |
| Drain-Source Voltage | VDS | 20 | V |
| Gate-Source Voltage | VGS | 12 | V |
| Continuous Drain Current (TC=25) | ID | 60 | A |
| Continuous Drain Current (TC=100) | ID | 40 | A |
| Pulsed Drain Current | IDM | 240 | A |
| Single Pulse Avalanche Energy | EAS | 64 | mJ |
| Power Dissipation (TC=25) | PD | 37 | W |
| Thermal Resistance Junction-to-Case | RJC | 3.4 | /W |
| Storage Temperature Range | TSTG | -55 to 150 | |
| Operating Junction Temperature Range | TJ | -55 to 150 | |
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||
| Parameter | Symbol | Conditions | Typ. | Unit |
| Static Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 20 | V |
| Drain-Source Leakage Current | IDSS | VDS=16V , VGS=0V , TJ=25 | - | uA |
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | - | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 0.75 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=20A | 4.8 | m |
| VGS=2.5V , ID=15A | 6.2 | m | ||
| Dynamic Characteristics | ||||
| Input Capacitance | Ciss | VDS=10V , VGS=0V , f=1MHz | 2000 | pF |
| Output Capacitance | Coss | 278 | pF | |
| Reverse Transfer Capacitance | Crss | 198 | pF | |
| Total Gate Charge | Qg | VDS=10V,VGS=10V,ID=20A | 27 | nC |
| Gate-Source Charge | Qgs | 6.5 | ||
| Gate-Drain Charge | Qgd | 6.4 | ||
| Switching Characteristics | ||||
| Turn-On Delay Time | Td(on) | VGS=4.5V,VDD=10V,ID=20A,RG=3 | 11 | nS |
| Rise Time | Tr | 33 | nS | |
| Turn-Off Delay Time | Td(off) | 47 | nS | |
| Fall Time | Tf | 95 | nS | |
| Diode Characteristics | ||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | V |
| Maximum Body-Diode Continuous Current | IS | 60 | A | |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | 11 | nS |
| Reverse Recovery Charge | Qrr | 3 | nC | |
| TO-252 Package Information | ||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min. | Max. | Min. | Max. | |
| A | 2.200 | 2.400 | 0.087 | 0.094 |
| A1 | 0.000 | 0.127 | 0.000 | 0.005 |
| b | 0.660 | 0.860 | 0.026 | 0.034 |
| c | 0.460 | 0.580 | 0.018 | 0.023 |
| D | 6.500 | 6.700 | 0.256 | 0.264 |
| D1 | 5.100 | 5.460 | 0.201 | 0.215 |
| D2 | 4.830 REF. | 0.190 REF. | ||
| E | 6.000 | 6.200 | 0.236 | 0.244 |
| e | 2.186 | 2.386 | 0.086 | 0.094 |
| L | 9.800 | 10.400 | 0.386 | 0.409 |
| L1 | 2.900 REF. | 0.114 REF. | ||
| L2 | 1.400 | 1.700 | 0.055 | 0.067 |
| L3 | 1.600 REF. | 0.063 REF. | ||
| L4 | 0.600 | 1.000 | 0.024 | 0.039 |
| 1.100 | 1.300 | 0.043 | 0.051 | |
| 0 | 8 | 0 | 8 | |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| V | 5.350 REF. | 0.211 REF. | ||
2504101957_Siliup-SP20N05TH_C41354841.pdf
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