60V P Channel MOSFET Siliup SP60P05BTQ Featuring Low RDSon and TO2203L Package for Power Switching
Key Attributes
Model Number:
SP60P05BTQ
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6mΩ@10V;7.3mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
864pF
Number:
1 P-Channel
Output Capacitance(Coss):
1.189nF
Input Capacitance(Ciss):
11.431nF
Pd - Power Dissipation:
375W
Gate Charge(Qg):
235.5nC@10V
Mfr. Part #:
SP60P05BTQ
Package:
TO-220-3L-C
Product Description
Product Overview
The SP60P05BTQ is a 60V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for power switching applications, DC-DC converters, and power management, this MOSFET features fast switching, low gate charge, and low RDS(on). It is 100% tested for single pulse avalanche energy and comes in a TO-220-3L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP60P05BTQ
- Package: TO-220-3L
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | -60 | V | ||||
| RDS(on)TYP | @10V | 6 | m | |||
| RDS(on)TYP | @4.5V | 7.3 | m | |||
| ID | -120 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -60 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | -120 | A | |||
| Continuous Drain Current (Tc=100) | ID | -80 | A | |||
| Pulsed Drain Current | IDM | -480 | A | |||
| Single Pulse Avalanche Energy | EAS | 229 | mJ | |||
| Power Dissipation (Tc=25) | PD | 375 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.33 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -60 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS=-48V , VGS=0V , TJ=25 | - | - | -1 | A |
| Gate Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.0 | -1.5 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-20A | - | 6 | 7.5 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-20A | - | 7.3 | 9.8 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-25V,VGS=0V,f=1MHz | - | 11431 | - | pF |
| Output Capacitance | Coss | - | 1189 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 864 | - | pF | |
| Total Gate Charge | Qg | VDS=-30V,VGS=-10V,ID=-110A | - | 235.5 | - | nC |
| Gate-Source Charge | Qgs | - | 52.1 | - | ||
| Gate-Drain Charge | Qg | - | 63.2 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=-30V,VGS=-10V,ID=-20A,RG=2. 4 | - | 19.8 | - | nS |
| Rise Time | tr | - | 26.1 | - | ||
| Turn-Off Delay Time | td(off) | - | 114 | - | ||
| Fall Time | tf | - | 52.7 | - | ||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = -1A, VGS = 0V | - | - | -1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | -120 | A | |
| Reverse Recovery Time | Trr | IS=-85A,di/dt=100A/us,TJ=25 | - | 91 | - | nS |
| Reverse Recovery Charge | Qrr | - | 210 | - | nC | |
Note: 1. The test condition is VDD=-30V,VGS=-10V,L=0.1mH,RG=25.
| TO-220-3L Package Information | |||||
|---|---|---|---|---|---|
| Symbol | Dimensions In Millimeters | Dimensions In Inches | |||
| Min. | Max. | Min. | Max. | ||
| A | 4.400 | 4.600 | 0.173 | 0.181 | |
| A1 | 2.250 | 2.550 | 0.089 | 0.100 | |
| b | 0.710 | 0.910 | 0.028 | 0.036 | |
| b1 | 1.170 | 1.370 | 0.046 | 0.054 | |
| c | 0.330 | 0.650 | 0.013 | 0.026 | |
| c1 | 1.200 | 1.400 | 0.047 | 0.055 | |
| D | 9.910 | 10.250 | 0.390 | 0.404 | |
| E | 8.950 | 9.750 | 0.352 | 0.384 | |
| E1 | 12.650 | 13.050 | 0.498 | 0.514 | |
| e | 2.540 TYP. | 0.100 TYP. | |||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 | |
| F | 2.650 | 2.950 | 0.104 | 0.116 | |
| H | 7.900 | 8.100 | 0.311 | 0.319 | |
| h | 0.000 | 0.300 | 0.000 | 0.012 | |
| L | 12.900 | 13.400 | 0.508 | 0.528 | |
| L1 | 2.850 | 3.250 | 0.112 | 0.128 | |
| V | 6.900 REF. | 0.276 REF. | |||
| 3.400 | 3.800 | 0.134 | 0.150 | ||
2504101957_Siliup-SP60P05BTQ_C41355204.pdf
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