86--136 6733 2386
quality High collector current PNP transistor Slkor SS8550W designed for general purpose electronic circuits factory
quality High collector current PNP transistor Slkor SS8550W designed for general purpose electronic circuits factory

High collector current PNP transistor Slkor SS8550W designed for general purpose electronic circuits

Key Attributes
Model Number: SS8550W
Product Custom Attributes
Current - Collector Cutoff:
100nA
DC Current Gain:
200@100mA,1V
Transition Frequency(fT):
100MHz
Type:
PNP
Vce Saturation(VCE(sat)):
500mV
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-
Mfr. Part #:
SS8550W
Package:
SOT-323
Product Description

Product Overview

The SS8550W is a PNP transistor designed for general-purpose applications. It offers high collector current capability and features complementary characteristics to the SS8050W. This transistor is suitable for various electronic circuits requiring amplification and switching functions.

Product Attributes

  • Brand: SLKOR
  • Model: SS8550W
  • Transistor Type: PNP
  • Package: SOT-323
  • Marking: Y2
  • Rank Range: 200350

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Absolute Maximum Ratings (Ta = 25)
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -25 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -1.5 A
Collector Power Dissipation PC 200 mW
Thermal Resistance From Junction To Ambient RJA 625 /W
Junction Temperature Tj 150
Storage Temperature Tstg -55 +150
Electrical Characteristics (Ta = 25)
Collector-base breakdown voltage V(BR)CBO IC=-100A, IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA, IB=0 -25 V
Emitter-base breakdown voltage V(BR)EBO IE=-100A, IC=0 -5 V
Collector cut-off current ICBO VCB=-40V, IE=0 -100 nA
Collector cut-off current ICEO VCE=-20V, IB=0 -100 nA
Emitter cut-off current IEBO VEB=-5V, IC=0 -100 nA
DC current gain hFE(1) VCE=-1V, IC=-100mA 120 400
DC current gain hFE(2) VCE=-1V, IC=-800mA 40
Collector-emitter saturation voltage VCE(sat) IC=-800mA, IB=-80mA -0.5 V
Base-emitter saturation voltage VBE(sat) IC=-800mA, IB=-80mA -1.2 V
Base-emitter voltage VBE VCE=-1V, IC=-10mA -1 V
Transition frequency fT VCE=-10V,IC=-50mA, f=30MHz 100 MHz
Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 20 pF

Dimensions

Package: SOT-323

Symbol A A1 B c D E e e1 HE Lp Q v w
Min 0.8 0.00 1.8 0.20 2.2 1.3 1.3 2.2 0.45 0.15 0.10
Typ 0.23 2.0 0.13
Max 1.1 0.1 2.0 0.25 2.4 1.5 1.5 2.4 0.55 0.25 0.1 0.15
Unit mm

Pinout:

  • 1. Base
  • 2. Emitter
  • 3. Collector

2212130930_Slkor-SS8550W_C5330379.pdf

Related Products
quality Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current factory
Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current
Product OverviewThis MBF package Surface Mount Schottky Bridge rectifier offers a reverse voltage range of 40 to 200V and a forward current of 1A. It features high surge current capability and is designed for surface mount applications. Ideal for single-phase half-wave 60 Hz rectification with ...
quality Zener diode YANGJIE BZX584B15VQ with 15 volt Zener voltage and 2 percent tolerance in compact SOD523 package factory
Zener diode YANGJIE BZX584B15VQ with 15 volt Zener voltage and 2 percent tolerance in compact SOD523 package
Product OverviewThe BZX584B3V6Q thru BZX584B36VQ series are small signal Zener diodes designed for general regulation functions. They feature an epoxy case that meets UL-94 V-0 flammability rating and is halogen-free, with Moisture Sensitivity Level 1. These diodes offer Zener voltages ranging from ...
quality YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages factory
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
quality Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design factory
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.