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quality Power Switching P Channel MOSFET Siliup SP9435P8 Featuring Low RDSon and Fast Switching Performance factory
quality Power Switching P Channel MOSFET Siliup SP9435P8 Featuring Low RDSon and Fast Switching Performance factory

Power Switching P Channel MOSFET Siliup SP9435P8 Featuring Low RDSon and Fast Switching Performance

Key Attributes
Model Number: SP9435P8
Product Custom Attributes
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
45mΩ@10V;65mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
68pF
Number:
1 P-Channel
Output Capacitance(Coss):
82pF
Pd - Power Dissipation:
1.5W
Input Capacitance(Ciss):
463pF
Gate Charge(Qg):
5.22nC@10V
Mfr. Part #:
SP9435P8
Package:
SOP-8L
Product Description

Product Overview

The SP9435P8 is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for power switching applications, it features fast switching, low gate charge, and low RDS(on). This MOSFET is suitable for hard-switched and high-frequency circuits, including Uninterruptible Power Supplies (UPS). The device is available in a SOP-8L package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP9435P8
  • Technology: P-Channel MOSFET
  • Package: SOP-8L
  • Marking: 9435 (Device Code)

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
V(BR)DSS -30 V
RDS(on)TYP @-10V 45 60 m
RDS(on)TYP @-4.5V 65 100 m
ID -5 A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current ID -5 A
Pulsed Drain Current IDM -20 A
Power Dissipation PD 1.2 W
Thermal Resistance Junction-to-Ambient RJA 104 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=-250uA -30 - - V
Drain-Source Leakage Current IDSS VDS=-24V, VGS=0V - - -1 uA
Gate-Source Leakage Current IGSS VGS=20V, VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS, ID =-250uA -1.0 -1.5 -2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=-10V, ID=-4A - 45 60 m
Static Drain-Source On-Resistance RDS(ON) VGS=-4.5V, ID=-2A - 65 100 m
Dynamic Characteristics
Input Capacitance Ciss VDS=-15V, VGS=0V, f=1MHz - 463 - pF
Output Capacitance Coss - 82 - pF
Reverse Transfer Capacitance Crss - 68 - pF
Total Gate Charge Qg VDS=-15V, VGS=-10V, ID=-5.1A - 5.22 - nC
Gate-Source Charge Qgs - 1.25 - nC
Gate-Drain Charge Qg d - 2.3 - nC
Switching Characteristics
Turn-On Delay Time Td(on) VDD=-15V, VGS=-10V, RG=6, ID=-1A - 18.4 - nS
Rise Time Tr - 11.4 - nS
Turn-Off Delay Time Td(off) - 39.4 - nS
Fall Time Tf - 5.2 - nS
Diode Characteristics
Diode Forward Voltage VSD VGS=0V, IS=-1A - - -1.2 V
Package Information (SOP-8L)
Symbol Dimensions (mm) Min. Max.
A 1.35 1.75
A1 0.10 0.25
A2 1.35 1.55
b 0.33 0.51
c 0.17 0.25
D 4.80 5.00
e (REF.) 1.27
E 5.80 6.20
E1 3.80 4.00
L 0.40 1.27
0 8

2504101957_Siliup-SP9435P8_C41355034.pdf
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