Plastic encapsulated Slkor BC856BW transistor PNP type ideal for switching and AF amplifier circuits

Key Attributes
Model Number: BC856BW
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
15nA
DC Current Gain:
220@2mA,5V
Transition Frequency(fT):
100MHz
Type:
PNP
Vce Saturation(VCE(sat)):
650mV
Pd - Power Dissipation:
150mW
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
65V
Operating Temperature:
-
Mfr. Part #:
BC856BW
Package:
SOT-323
Product Description

Product Overview

These PNP plastic-encapsulated transistors are ideally suited for automatic insertion and are designed for switching and AF amplifier applications. They offer excellent performance in various electronic circuits.

Product Attributes

  • Brand: SLKOR (implied by URL www.slkormicro.com)
  • Package Type: SOT-323
  • Transistor Type: PNP

Technical Specifications

Model Parameter Test Conditions Min Max Unit
BC856W
BC857W
BC858W
Collector-Base Voltage (VCBO) -80 -50 -30 V
Collector-Emitter Voltage (VCEO) -65 -45 -30 V
Emitter-Base Voltage (VEBO) -5 V
Collector Current (IC) Continuous 0.1 A
Collector Power Dissipation (PC*) 150 mW
Junction Temperature (TJ) 150
Storage Temperature (Tstg) -65 150
BC856W
BC857W
BC858W
Collector-base breakdown voltage (VCBO) IC= -10A, IE=0 -80 -50 -30 V
Collector-emitter breakdown voltage (VCEO) IC= -10mA, IB=0 -65 -45 -30 V
Emitter-base breakdown voltage (VEBO) IE= -1A, IC=0 -5 V
Collector cut-off current (ICBO) -15 nA
BC856AW, 857AW,858AW DC current gain (hFE) VCE= -5V, IC= -2mA 125 250
BC856BW, 857BW,858BW 220 475
BC857CW,BC858CW 420 800
Collector-emitter saturation voltage (VCE(sat)) -0.65 V
Base-emitter saturation voltage (VBE(sat)) -1.1 V
Transition frequency (fT) 100 MHz
Collector capacitance (Cob) 4.5 pF

Package Outline: Plastic surface mounted package; 3 leads SOT-323


2210091830_Slkor-BC856BW_C5186010.pdf

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