Surface Mount 30V P Channel MOSFET Siliup SP3407T1 Featuring Low RDSon and Continuous Drain Current
Key Attributes
Model Number:
SP3407T1
Product Custom Attributes
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
4.1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
45mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Reverse Transfer Capacitance (Crss@Vds):
57pF
Number:
1 P-Channel
Output Capacitance(Coss):
72pF
Pd - Power Dissipation:
1.4W
Input Capacitance(Ciss):
501pF
Gate Charge(Qg):
9nC@10V
Mfr. Part #:
SP3407T1
Package:
SOT-23-3L
Product Description
Product Overview
The SP3407T1 is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. This surface mount device offers high power and current handling capabilities, making it suitable for applications such as battery switches and DC/DC converters. It features a low RDS(on) of 45m at -10V and 65m at -4.5V, with a continuous drain current of -4.1A.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: P-Channel MOSFET
- Package: SOT-23-3L
- Device Code: 3407
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -30 | V | |||
| RDS(on) | @-10V | 45 | m | |||
| RDS(on) | @-4.5V | 65 | m | |||
| ID | -4.1 | A | ||||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | -30 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | -4.1 | A | |||
| Pulse Drain Current | IDM | Tested | -16.4 | A | ||
| Power Dissipation | PD | 1.4 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 90 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250A | -30 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-24V , VGS=0V | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -1 | -1.6 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID =-4.1A | 45 | 60 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID =-3A | 65 | 90 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V , VGS=0V , f=1MHz | 501 | pF | ||
| Output Capacitance | Coss | 72 | pF | |||
| Reverse Transfer Capacitance | Crss | 57 | pF | |||
| Total Gate Charge | Qg | VDS=-15V , VGS=-10V , ID=-5A | 9 | nC | ||
| Gate-Source Charge | Qgs | 1.5 | ||||
| Gate-Drain Charge | Qg | 2.3 | ||||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=-15V VGS=-10V , RG=3 , ID=-1A | 8.6 | nS | ||
| Turn-On Rise Time | tr | 5.0 | ||||
| Turn-Off Delay Time | td(off) | 28.2 | ||||
| Turn-Off Fall Time | tf | 13.5 | ||||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| Package Information (Dimensions in millimeters) | ||||||
| Symbol | Min. | Max. | Typ. | |||
| A | 1.050 | 1.250 | ||||
| A1 | 0.000 | 0.100 | ||||
| A2 | 1.050 | 1.150 | ||||
| b | 0.300 | 0.500 | ||||
| c | 0.100 | 0.200 | ||||
| D | 2.820 | 3.020 | ||||
| E | 1.500 | 1.700 | ||||
| E1 | 2.650 | 2.950 | ||||
| e | 0.950 | |||||
| e1 | 1.800 | 2.000 | ||||
| L | 0.300 | 0.600 | ||||
| 0 | 8 | |||||
2504101957_Siliup-SP3407T1_C41354968.pdf
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