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quality NPN power transistor Slkor BU406 optimized for high voltage handling and rapid switching applications factory
quality NPN power transistor Slkor BU406 optimized for high voltage handling and rapid switching applications factory

NPN power transistor Slkor BU406 optimized for high voltage handling and rapid switching applications

Key Attributes
Model Number: BU406
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
5uA
DC Current Gain:
100@1A,5V
Transition Frequency(fT):
10MHz
Type:
NPN
Vce Saturation(VCE(sat)):
1V
Pd - Power Dissipation:
2W
Current - Collector(Ic):
7A
Collector - Emitter Voltage VCEO:
200V
Operating Temperature:
-
Mfr. Part #:
BU406
Package:
TO-220-3L
Product Description

Product Overview

The BU406 is a high-voltage, fast-switching NPN power transistor designed for various applications. It features a low saturation voltage, enabling efficient operation. Pb-free packages are available, contributing to environmental considerations. This transistor is suitable for applications requiring high voltage handling and rapid switching capabilities.

Product Attributes

  • Brand: SLKORMICRO (implied by website URL)
  • Model: BU406
  • Package Type: TO-220-3L
  • Material: Pb-Free Packages Available

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 400 V
Collector-emitter breakdown voltage V(BR)CEO IC=100mA,IB=0 200 V
Emitter-base breakdown voltage V(BR)EBO IE=100uA,IC=0 6 V
Collector cut-off current ICES VCB=400V,IE=0 5 mA
Collector cut-off current ICES VCB=250V,IE=0 1 mA
Collector cut-off current ICBO VCB=300V,IE=0 5 A
Emitter cut-off current IEBO VEB=6V,IC=0 1 mA
DC current gain hFE VCE=5V, IC=1A 50 100
Collector-emitter saturation voltage VCE(sat) IC=5A,IB=500mA 1 V
Base-emitter saturation voltage VBE(sat) IC=5A,IB=500mA 1.2 V
Collector output capacitance Cob VCB=10V,IE=0, f=1MHz 80 pF
Transition frequency fT VCE=5V,IC=0.2A,f=10MHz 10 MHz
Collector-Base Voltage VCBO 400 V
Collector-Emitter Voltage VCEO 200 V
Emitter-Base Voltage VEBO 6 V
Collector Current IC 7 A
Collector Power Dissipation PC 2 W
Thermal Resistance from Junction to Ambient RJA 62.5 /W
Junction Temperature Tj 150
Storage Temperature Tstg -55 +150
Symbol Dimensions In Millimeters Dimensions In Inches
A 4.470 - 4.670 0.176 - 0.184
A1 2.520 - 2.820 0.099 - 0.111
b 0.710 - 0.910 0.028 - 0.036
b1 1.170 - 1.370 0.046 - 0.054
c 0.310 - 0.530 0.012 - 0.021
c1 1.170 - 1.370 0.046 - 0.054
D 10.010 - 10.310 0.394 - 0.406
E 8.500 - 8.900 0.335 - 0.350
E1 12.060 - 12.460 0.475 - 0.491
e
e1 4.980 - 5.180 0.196 - 0.204
F 2.590 - 2.890 0.102 - 0.114
h 0.000 - 0.300 0.000 - 0.012
L 13.400 - 13.800 0.528 - 0.543
L1 3.560 - 3.960 0.140 - 0.156
3.735 - 3.935 0.147 - 0.155
2.540 TYP 0.100 TYP

2209051730_Slkor-BU406_C5155411.pdf

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