Power Management 150V N Channel MOSFET Siliup SP015N16GHTQ with Low RDSon and Fast Switching Performance
Key Attributes
Model Number:
SP015N16GHTQ
Product Custom Attributes
Drain To Source Voltage:
150V
Configuration:
-
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+150℃
RDS(on):
16mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
9pF
Number:
1 N-channel
Output Capacitance(Coss):
153pF
Pd - Power Dissipation:
145W
Input Capacitance(Ciss):
1.869nF
Gate Charge(Qg):
25nC@10V
Mfr. Part #:
SP015N16GHTQ
Package:
TO-220-3L
Product Description
Product Overview
The SP015N16GHTQ is a 150V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), achieved through advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, DC-DC converters, and power management systems.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP015N16GHTQ
- Channel Type: N-Channel
- Technology: Advanced Split Gate Trench Technology
- Package: TO-220-3L
- Marking: 015N16GH
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 150 | V | ||||
| RDS(on)TYP | @10V | 16 | m | |||
| ID | 50 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25, unless otherwise noted) | 150 | V | ||
| Gate-Source Voltage | VGS | (Ta=25, unless otherwise noted) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25) | 50 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 35 | A | ||
| Pulsed Drain Current | IDM | 200 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 240 | mJ | |||
| Power Dissipation | PD | (Tc=25) | 145 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.86 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 150 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 120V, VGS = 0V | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 0.1 | A |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.0 | 3.0 | 4.0 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 16 | 20 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS = 75V, VGS = 0V, f = 1.0MHz | - | 1869 | - | pF |
| Output Capacitance | Coss | - | 153 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 9 | - | pF | |
| Total Gate Charge | Qg | VDS=75V , VGS=10V , ID=20A | - | 25 | - | nC |
| Gate-Source Charge | Qgs | - | 7.8 | - | ||
| Gate-Drain Charge | Qgd | - | 4 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS = 50V, ID = 20A, RG = 6 | - | 13 | - | nS |
| Rise Time | tr | - | 5 | - | ||
| Turn-Off Delay Time | td(off) | - | 21 | - | nS | |
| Fall Time | tf | - | 5 | - | ||
| Source-Drain Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 50 | A | |
| Body Diode Reverse Recovery Time | trr | IS=20A, di/dt=100A/us, TJ=25 | - | 70 | - | nS |
| Body Diode Reverse Recovery Charge | Qrr | - | 156 | - | nC | |
| Package Information (TO-220-3L) | ||||||
| Dimension | Symbol | Millimeters (Min/Max) | Inches (Min/Max) | |||
| A | 4.400 / 4.600 | 0.173 / 0.181 | ||||
| A1 | 2.250 / 2.550 | 0.089 / 0.100 | ||||
| b | 0.710 / 0.910 | 0.028 / 0.036 | ||||
| b1 | 1.170 / 1.370 | 0.046 / 0.054 | ||||
| c | 0.330 / 0.650 | 0.013 / 0.026 | ||||
| c1 | 1.200 / 1.400 | 0.047 / 0.055 | ||||
| D | 9.910 / 10.250 | 0.390 / 0.404 | ||||
| E | 8.950 / 9.750 | 0.352 / 0.384 | ||||
| E1 | 12.650 / 13.050 | 0.498 / 0.514 | ||||
| e | 2.540 TYP. | 0.100 TYP. | ||||
| e1 | 4.980 / 5.180 | 0.196 / 0.204 | ||||
| F | 2.650 / 2.950 | 0.104 / 0.116 | ||||
| H | 7.900 / 8.100 | 0.311 / 0.319 | ||||
| h | 0.000 / 0.300 | 0.000 / 0.012 | ||||
| L | 12.900 / 13.400 | 0.508 / 0.528 | ||||
| L1 | 2.850 / 3.250 | 0.112 / 0.128 | ||||
| V | 6.900 REF. | 0.276 REF. | ||||
| 3.400 / 3.800 | 0.134 / 0.150 | |||||
Note: 1. The test condition for Single Pulse Avalanche Energy (EAS) is VDD=50V, VGS=10V, L=0.5mH, RG=25.
2504101957_Siliup-SP015N16GHTQ_C42372349.pdf
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