30 Volt P Channel MOSFET Siliup SP30P45T2 Ideal for Battery Switch and Power Conversion Applications
Key Attributes
Model Number:
SP30P45T2
Product Custom Attributes
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
4.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
45mΩ@10V
Gate Threshold Voltage (Vgs(th)):
900mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
60pF
Number:
1 P-Channel
Output Capacitance(Coss):
105pF
Pd - Power Dissipation:
1.2W
Input Capacitance(Ciss):
880pF
Gate Charge(Qg):
8.5nC@4.5V
Mfr. Part #:
SP30P45T2
Package:
SOT-23
Product Description
Product Overview
The SP30P45T2 is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface-mount device is ideal for applications such as battery switches and DC/DC converters. It offers robust performance with a low on-resistance at various gate-source voltages.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: P-Channel MOSFET
- Package Type: SOT-23
- Device Code: 30P45
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -30 | V | |||
| RDS(on) Typ. @ -10V | RDS(on)TYP | -10V | 45 | 65 | m | |
| RDS(on) Typ. @ -4.5V | -4.5V | 55 | 75 | m | ||
| RDS(on) Typ. @ -2.5V | -2.5V | 65 | 90 | m | ||
| Continuous Drain Current | ID | -4.2 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | -30 | V | |||
| Gate-Source Voltage | VGSS | 12 | V | |||
| Continuous Drain Current | ID | -4.2 | A | |||
| Pulse Drain Current | IDM | Tested | -16.8 | A | ||
| Power Dissipation | PD | 1.2 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 104 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250A | -30 | - | V | |
| Drain-Source Leakage Current | IDSS | VDS=-24V , VGS=0V | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -0.7 | -0.9 | -1.3 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID =-4.2A | - | 45 | 65 | m |
| VGS=-4.5V , ID =-4A | - | 55 | 75 | m | ||
| VGS=-2.5V , ID =-1A | - | 65 | 90 | m | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V , VGS=0V , f=1MHz | - | 880 | - | pF |
| Output Capacitance | Coss | - | 105 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 60 | - | pF | |
| Total Gate Charge | Qg | VDS=-15V , VGS=-4.5V , ID=-4.2A | - | 8.5 | - | nC |
| Gate-Source Charge | Qgs | - | 1.8 | - | ||
| Gate-Drain Charge | Qgd | - | 2.7 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=-15V VGS=-10V , RG=6 , ID=-4.2A | - | 6.3 | - | nS |
| Turn-On Rise Time | tr | - | 3.2 | - | ||
| Turn-Off Delay Time | td(off) | - | 38.2 | - | ||
| Turn-Off Fall Time | tf | - | 12 | - | ||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | - | - | -1.2 | V |
| Package Information (SOT-23) | ||||||
| Symbol | Dimensions In Millimeters | Min. | Max. | |||
| A | 0.90 | 1.15 | ||||
| A1 | 0.00 | 0.10 | ||||
| A2 | 0.90 | 1.05 | ||||
| b | 0.30 | 0.50 | ||||
| c | 0.08 | 0.15 | ||||
| D | 2.80 | 3.00 | ||||
| E | 1.20 | 1.40 | ||||
| E1 | 2.25 | 2.55 | ||||
| e | (REF.) | 0.95 | ||||
| e1 | 1.80 | 2.00 | ||||
| L | (REF.) | 0.55 | ||||
| L1 | 0.30 | 0.50 | ||||
| 0 | 8 | |||||
2504101957_Siliup-SP30P45T2_C41354963.pdf
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