16V P Channel MOSFET Siliup SP1613T1 with Surface Mount Package and High Current Handling Capability
Key Attributes
Model Number:
SP1613T1
Product Custom Attributes
Drain To Source Voltage:
16V
Configuration:
-
Current - Continuous Drain(Id):
8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
16mΩ@4.5V;21mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
362pF
Number:
1 P-Channel
Output Capacitance(Coss):
411pF
Pd - Power Dissipation:
2W
Input Capacitance(Ciss):
2.05nF
Gate Charge(Qg):
30nC@10V
Mfr. Part #:
SP1613T1
Package:
SOT-23-3L
Product Description
Product Overview
The SP1613T1 is a 16V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface-mount device is suitable for applications such as battery switches and DC/DC converters. It offers a low on-resistance of 16m at -4.5V and 21m at -2.5V, with a continuous drain current rating of -8A.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Model: SP1613T1
- Package Type: SOT-23-3L
- Device Code: 1613
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | - | -16 | - | - | V |
| Gate-Source Voltage | VGSS | - | - | - | 12 | V |
| Continuous Drain Current | ID | - | - | - | -8 | A |
| Pulse Drain Current | IDM | Tested | - | - | -32 | A |
| Power Dissipation | PD | Ta=25 | - | - | 2 | W |
| Thermal Resistance Junction-to-Ambient | RJA | - | - | 62.5 | - | C/W |
| Storage Temperature Range | TSTG | - | -55 | - | 150 | C |
| Operating Junction Temperature Range | TJ | - | -55 | - | 150 | C |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250A | -16 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=-13V , VGS=0V | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -0.4 | -0.7 | -1.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= -4.5V, ID=-6A | - | 16 | 20 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= -2.5V, ID=-5A | - | 21 | 28 | m |
| Input Capacitance | Ciss | VDS=-10V , VGS=0V , f=1MHz | - | 2050 | - | pF |
| Output Capacitance | Coss | - | - | 411 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 362 | - | pF |
| Total Gate Charge | Qg | VDS=-16V , VGS=-10V , ID=-9.1A | - | 30 | - | nC |
| Gate-Source Charge | Qgs | - | - | 5.3 | - | - |
| Gate-Drain Charge | Qg d | - | - | 7.6 | - | - |
| Turn-On Delay Time | td(on) | VDD=-16V VGS=-10V , RG=2.5, ID=-6A | - | 14 | - | nS |
| Turn-On Rise Time | tr | - | - | 20 | - | - |
| Turn-Off Delay Time | td(off) | - | - | 95 | - | - |
| Turn-Off Fall Time | tf | - | - | 65 | - | - |
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | - | - | -1.2 | V |
| Symbol | Dimensions (mm) | Min. | Max. | Typ. |
|---|---|---|---|---|
| A | - | 1.050 | 1.250 | - |
| A1 | - | 0.000 | 0.100 | - |
| A2 | - | 1.050 | 1.150 | - |
| b | - | 0.300 | 0.500 | - |
| c | - | 0.100 | 0.200 | - |
| D | - | 2.820 | 3.020 | - |
| E | - | 1.500 | 1.700 | - |
| E1 | - | 2.650 | 2.950 | - |
| e | - | 0.950 | - | - |
| e1 | - | - | - | 1.800 |
| L | - | 0.300 | 0.600 | - |
| - | 0 | 8 | - |
2504101957_Siliup-SP1613T1_C41354939.pdf
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