N Channel MOSFET Siliup SP20N22T2 with 20 Volt Drain Source Voltage and SOT 23 Surface Mount Package Design
Key Attributes
Model Number:
SP20N22T2
Product Custom Attributes
Drain To Source Voltage:
20V
Configuration:
-
Current - Continuous Drain(Id):
5.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
22mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
125pF
Number:
1 N-channel
Output Capacitance(Coss):
155pF
Pd - Power Dissipation:
1W
Input Capacitance(Ciss):
800pF
Gate Charge(Qg):
11nC@4.5V
Mfr. Part #:
SP20N22T2
Package:
SOT-23
Product Description
Product Overview
The SP20N22T2 is a 20V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this device is suitable for applications such as battery switches and DC/DC converters. It features a surface mount package for convenient integration.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: SP20N22T2
- Technology: N-Channel MOSFET
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 20 | V | |||
| Static Drain-Source On-Resistance | RDS(on) | 4.5V | 22 | 28 | m | |
| 2.5V | 28 | 35 | m | |||
| Continuous Drain Current | ID | 5.8 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 20 | V | |||
| Gate-Source Voltage | VGSS | -12 | 12 | V | ||
| Continuous Drain Current | ID | 5.8 | A | |||
| Pulse Drain Current | IDM | Tested | 23.2 | A | ||
| Power Dissipation | PD | 1 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 125 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 20 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=16V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 0.5 | 0.7 | 1.2 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=4.5A | - | 22 | 28 | m |
| VGS=2.5V, ID=3.5A | - | 28 | 35 | m | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=8V , VGS=0V , f=1MHz | - | 800 | - | pF |
| Output Capacitance | Coss | - | 155 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 125 | - | pF | |
| Total Gate Charge | Qg | VDS=10V , VGS=4.5V , ID=3A | - | 11 | - | nC |
| Gate-Source Charge | Qgs | - | 2.3 | - | nC | |
| Gate-Drain Charge | Qgd | - | 2.5 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=10V VGS=4.5V , RG=3, ID=3A | - | 5 | - | nS |
| Turn-On Rise Time | tr | - | 18 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 24 | - | nS | |
| Turn-Off Fall Time | tf | - | 8 | - | nS | |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Package Information (SOT-23) | ||||||
| Symbol | Dimensions (mm) | Min. | Max. | |||
| A | 0.90 | 1.15 | ||||
| A1 | 0.00 | 0.10 | ||||
| A2 | 0.90 | 1.05 | ||||
| b | 0.30 | 0.50 | ||||
| c | 0.08 | 0.15 | ||||
| D | 2.80 | 3.00 | ||||
| E1 | 1.20 | 1.40 | ||||
| E | 2.25 | 2.55 | ||||
| e | REF. | 0.95 | ||||
| e1 | 1.80 | 2.00 | ||||
| L | REF. | 0.55 | ||||
| L1 | 0.30 | 0.50 | ||||
| 0 | 8 | |||||
| Order Information | ||||||
| Device | Package | Unit/Tape | ||||
| SP20N22T2 | SOT-23 | 3000 | ||||
2504101957_Siliup-SP20N22T2_C41354901.pdf
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