Power Management Using Siliup SP60N13GDNK 60V N Channel Power MOSFET with Split Gate Trench Technology
Key Attributes
Model Number:
SP60N13GDNK
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
25A
Operating Temperature -:
-55℃~+150℃
RDS(on):
13mΩ@10V;16mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
2 N-Channel
Output Capacitance(Coss):
235pF
Input Capacitance(Ciss):
940pF
Pd - Power Dissipation:
45W
Gate Charge(Qg):
15.9nC@10V
Mfr. Part #:
SP60N13GDNK
Package:
PDFN-8L(5x6)
Product Description
Product Overview
The SP60N13GDNK is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for efficient power management. Featuring advanced Split Gate Trench Technology, it offers fast switching speeds and a surface mount package for ease of integration. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for applications such as DC-DC converters and motor control.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Technology: Advanced Split Gate Trench Technology
- Package: PDFN5X6-8L
- Channel Type: N-Channel
- Testing: 100% Single Pulse avalanche energy Test
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | 60 | V | |||
| RDS(on)TYP | RDS(on) | @10V | 13 | 16 | m | |
| RDS(on)TYP | RDS(on) | @4.5V | 16 | 21 | m | |
| ID | ID | 25 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 60 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current (Tc=25C) | ID | (Tc=25C) | 25 | A | ||
| Continuous Drain Current (Tc=100C) | ID | (Tc=100C) | 16 | A | ||
| Pulse Drain Current Tested | IDM | 100 | A | |||
| Single Pulse Avalanche Energy | EAS | 64 | mJ | |||
| Power Dissipation (Tc=25C) | PD | (Tc=25C) | 45 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 2.78 | C/W | |||
| Maximum Junction Temperature | TJ | -55 | 150 | C | ||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250mA | 60 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=48V, VGS=0V | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 1 | 1.8 | 2.5 | V |
| Drain-Source On-state Resistance | RDS(ON) | VGS=10V, ID=15A | - | 13 | 16 | m |
| Drain-Source On-state Resistance | RDS(ON) | VGS=4.5V, ID=10A | - | 16 | 21 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VGS=0V, VDS=30V,F=1MHz | - | 940 | - | pF |
| Output Capacitance | Coss | - | 235 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 10 | - | pF | |
| Total Gate Charge | Qg | VDS=30V, VGS=10V, ID=10A | - | 15.9 | - | nC |
| Gate-Source Charge | Qgs | - | 2.8 | - | nC | |
| Gate-Drain Charge | Qg d | - | 4.2 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=30V, ID=10A, VGS=10V, RG=4.7 | - | 4 | - | nS |
| Rise Time | tr | - | 6 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 18.8 | - | nS | |
| Fall Time | tf | - | 6.4 | - | nS | |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 25 | A | |
| Reverse Recovery Time | Trr | IS=10 A,di/dt=100 A/sTJ=25 | - | 19 | - | nS |
| Reverse Recovery Charge | Qrr | - | 12 | - | nC | |
| Package Information | ||||||
| Package Type | PDFN5X6-8L | |||||
| Dimensions (mm) | Min | Max | ||||
| A | 0.900 | 1.000 | ||||
| A3 | 0.254 REF. | |||||
| D | 4.944 | 5.096 | ||||
| E | 5.974 | 6.126 | ||||
| D1 | 1.470 | 1.870 | ||||
| D2 | 0.470 | 0.870 | ||||
| E1 | 3.375 | 3.575 | ||||
| D3 | 4.824 | 4.976 | ||||
| E2 | 5.674 | 5.826 | ||||
| k | 1.190 | 1.390 | ||||
| b | 0.350 | 0.450 | ||||
| e | 1.270 TYP. | |||||
| L | 0.559 | 0.711 | ||||
| L1 | 0.424 | 0.576 | ||||
| H | 0.574 | 0.726 | ||||
| 10 | 12 | |||||
| Order Information | ||||||
| Device | Package | Unit/Tape | ||||
| SP60N13GDNK | PDFN5X6-8L | 5000 | ||||
2504101957_Siliup-SP60N13GDNK_C22466781.pdf
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