30 Volt MOSFET Siliup SP30N06GTH N Channel Low Gate Charge TO 252 Package Power Device
Key Attributes
Model Number:
SP30N06GTH
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
40A
RDS(on):
6.5mΩ@10V;10mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF
Number:
1 N-channel
Output Capacitance(Coss):
240pF
Pd - Power Dissipation:
35W
Input Capacitance(Ciss):
625pF
Gate Charge(Qg):
7.1nC@10V
Mfr. Part #:
SP30N06GTH
Package:
TO-252
Product Description
Product Overview
The SP30N06GTH is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced split gate trench technology, it offers fast switching, low gate charge, and low RDS(on). This MOSFET is ideal for power switching applications and DC-DC converters. It is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 30N06G
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 30 | V | ||||
| RDS(on)TYP | @10V | 6.5 | m | |||
| RDS(on)TYP | @4.5V | 10 | m | |||
| ID | 40 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 40 | A | |||
| Continuous Drain Current (Tc=100) | ID | 27 | A | |||
| Pulsed Drain Current | IDM | 160 | A | |||
| Single Pulse Avalanche Energy | EAS | 39.2 | mJ | |||
| Power Dissipation (Tc=25) | PD | 35 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 3.57 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS=30V, VGS=0V | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID =250uA | 1 | 1.7 | 2.5 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS=10V, ID=12A | - | 6.5 | 8.2 | m |
| Drain-Source ON Resistance | RDS(ON) | VGS=4.5V, ID=12A | - | 10 | 13.5 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=15V,VGS=0V,f=1MHZ | - | 625 | - | pF |
| Output Capacitance | Coss | - | 240 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 25 | - | pF | |
| Total Gate Charge | Qg | VGS=10V,VDS=15V,ID=12A | - | 7.1 | - | nC |
| Gate-Source Charge | Qgs | - | 2.2 | - | nC | |
| Gate-Drain Charge | Qg d | - | 3.1 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS=10V,VDD=15V, ID=12A, RGEN=2 | - | 7 | - | nS |
| Rise Time | tr | - | 18.8 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 19.5 | - | nS | |
| Fall Time | tf | - | 3.4 | - | nS | |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 40 | A | |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 11 | - | nS |
| Reverse Recovery Charge | Qrr | - | 18 | - | nC | |
| Package Information (TO-252) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 2.200 | 2.400 | 0.087 | 0.094 | ||
| A1 | 0.000 | 0.127 | 0.000 | 0.005 | ||
| b | 0.660 | 0.860 | 0.026 | 0.034 | ||
| c | 0.460 | 0.580 | 0.018 | 0.023 | ||
| D | 6.500 | 6.700 | 0.256 | 0.264 | ||
| D1 | 5.100 | 5.460 | 0.201 | 0.215 | ||
| D2 | 4.830 REF. | 0.190 REF. | ||||
| E | 6.000 | 6.200 | 0.236 | 0.244 | ||
| e | 2.186 | 2.386 | 0.086 | 0.094 | ||
| L | 9.800 | 10.400 | 0.386 | 0.409 | ||
| L1 | 2.900 REF. | 0.114 REF. | ||||
| L2 | 1.400 | 1.700 | 0.055 | 0.067 | ||
| L3 | 1.600 REF. | 0.063 REF. | ||||
| L4 | 0.600 | 1.000 | 0.024 | 0.039 | ||
| 1.100 | 1.300 | 0.043 | 0.051 | |||
| 0 | 8 | 0 | 8 | |||
| h | 0.000 | 0.300 | 0.000 | 0.012 | ||
| V | 5.350 REF. | 0.211 REF. | ||||
2504101957_Siliup-SP30N06GTH_C22466705.pdf
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