100V N Channel Power MOSFET Siliup SP010N10HTQ with Low On Resistance and Single Pulse Avalanche Test
Key Attributes
Model Number:
SP010N10HTQ
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
100A
RDS(on):
13mΩ@10V,40A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
197pF
Number:
1 N-channel
Output Capacitance(Coss):
244pF
Input Capacitance(Ciss):
4.82nF
Pd - Power Dissipation:
200W
Gate Charge(Qg):
123nC@10V
Mfr. Part #:
SP010N10HTQ
Package:
TO-220-3L
Product Description
Product Overview
The SP010N10HTQ is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for power switching applications, DC-DC converters, and power management, this MOSFET features fast switching, low gate charge, and low RDS(on). It is 100% tested for single pulse avalanche energy. The product is available in a TO-220-3L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP010N10HTQ
- Package Type: TO-220-3L
- Channel Type: N-Channel
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 100 | V | |||
| On-Resistance | RDS(on)TYP | @10V | 10 | m | ||
| Continuous Drain Current | ID | 100 | A | |||
| Features | ||||||
| Fast Switching | ||||||
| Low Gate Charge and Rdson | ||||||
| 100% Single Pulse avalanche energy Test | ||||||
| Applications | ||||||
| Power switching application | ||||||
| DC-DC Converter | ||||||
| Power Management | ||||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25, unless otherwise noted) | 100 | V | ||
| Gate-Source Voltage | VGS | (Ta=25, unless otherwise noted) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25) | 100 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 80 | A | ||
| Pulsed Drain Current | IDM | 400 | A | |||
| Single Pulsed Avalanche Energy | EAS | 720 | mJ | |||
| Power Dissipation | PD | (Tc=25) | 200 | W | ||
| Thermal Resistance, Junction-Case | RJC | 0.625 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 80 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=80V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 2 | 3 | 4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=40A | - | 10 | 13 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=50V , VGS=0V , f=1MHz | - | 4820 | - | pF |
| Output Capacitance | Coss | - | 244 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 197 | - | pF | |
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=40A | - | 123 | - | nC |
| Gate-Source Charge | Qgs | - | 27 | - | nC | |
| Gate-Drain Charge | Qg d | - | 44 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=50V, VGS=10V , RG=2.5, ID=40A | - | 15 | - | ns |
| Rise Time | Tr | - | 50 | - | ns | |
| Turn-Off Delay Time | Td(off) | - | 40 | - | ns | |
| Fall Time | Tf | - | 55 | - | ns | |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=40A , TJ=25 | - | - | 1.2 | V |
| Diode Continuous Current | IS | - | - | 100 | A | |
| Reverse Recovery Time | Trr | ISD=40A, di/dt=100A/us, Tj=25 | - | 38 | - | ns |
| Reverse Recovery Charge | Qrr | - | 53 | - | nC | |
| Package Information | ||||||
| Symbol | Dimensions In Millimeters | Min. | Max. | |||
| A | 2.700 | 2.900 | ||||
| B | 6.400 | 6.800 | ||||
| C | 0.300 | 0.700 | ||||
| D | 11 | 15 | ||||
| E | 1.1 | 1.5 | ||||
| F | 0.7 | 0.9 | ||||
| G | 2.54TYP | |||||
| W | 9.8 | 10.2 | ||||
| H | 4.3 | 4.7 | ||||
| H1 | 2.2 | 2.5 | ||||
| K | 2.7 | 3.1 | ||||
| L | 14.8 | 16.8 | ||||
| L1 | 9.0 | 9.4 | ||||
| N | 1.2 | 1.4 | ||||
| P | 12.7 | 13.3 | ||||
| P1 | 7.6 | 8.2 | ||||
| Q | 3.5 | 3.7 | ||||
2505291610_Siliup-SP010N10HTQ_C48888441.pdf
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