N Channel MOSFET Siliup SP2302CT2 20V Low On Resistance SOT 23 Package for Battery Switches
Key Attributes
Model Number:
SP2302CT2
Product Custom Attributes
Drain To Source Voltage:
20V
Configuration:
-
Current - Continuous Drain(Id):
1.5A
RDS(on):
55mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
23pF
Number:
1 N-channel
Output Capacitance(Coss):
34pF
Input Capacitance(Ciss):
220pF
Pd - Power Dissipation:
150mW
Gate Charge(Qg):
3.2nC@4.5V
Mfr. Part #:
SP2302CT2
Package:
SOT-23
Product Description
Product Overview
The SP2302CT2 is a 20V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface-mount device is suitable for applications such as battery switches and DC/DC converters. It offers a low on-resistance and comes in a compact SOT-23 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP2302CT2
- Channel Type: N-Channel
- Package: SOT-23
- Device Code: 2302C
Technical Specifications
| Parameter | Symbol | Conditions | Value | Unit | ||
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 20 | V | |||
| On-Resistance (Typ.) | RDS(on) | @4.5V | 55 | m | ||
| Continuous Drain Current | ID | 1.5 | A | |||
| On-Resistance (Typ.) | RDS(on) | @2.5V | 80 | m | ||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 20 | V | |||
| Gate-Source Voltage | VGSS | 12 | V | |||
| Continuous Drain Current | ID | 1.5 | A | |||
| Pulse Drain Current | IDM | Tested | 6 | A | ||
| Power Dissipation | PD | 150 | mW | |||
| Junction-to-Ambient Thermal Resistance | RJA | 833 | C/W | |||
| Storage Temperature Range | TSTG | -55 to 150 | C | |||
| Operating Junction Temperature Range | TJ | -55 to 150 | C | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 20 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=16V , VGS=0V | - | 1 | uA | |
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | - | 100 | nA | |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 0.4 | 0.7 | 1 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID =1.5A | - | 55 | 69 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=2.5V , ID =1.2A | - | 80 | 105 | m |
| Input Capacitance | Ciss | VDS=10V , VGS=0V , f=1MHz | - | 220 | - | pF |
| Output Capacitance | Coss | - | 34 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 23 | - | pF | |
| Total Gate Charge | Qg | VDS=10V , VGS=4.5V , ID=2A | - | 3.2 | - | nC |
| Gate-Source Charge | Qgs | - | 0.5 | - | nC | |
| Gate-Drain Charge | Qg d | - | 0.9 | - | nC | |
| Turn-On Delay Time | td(on) | VDD=10V VGS=4.5V , RG=6, ID=1A | - | 12.3 | - | nS |
| Turn-On Rise Time | tr | - | 13.1 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 28.9 | - | nS | |
| Turn-Off Fall Time | tf | - | 7.5 | - | nS | |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Package Information (SOT-23) | ||||||
| Dimension A | A | 0.90 - 1.15 | mm | |||
| Dimension A1 | A1 | 0.00 - 0.10 | mm | |||
| Dimension A2 | A2 | 0.90 - 1.05 | mm | |||
| Dimension b | b | 0.30 - 0.50 | mm | |||
| Dimension c | c | 0.08 - 0.15 | mm | |||
| Dimension D | D | 2.80 - 3.00 | mm | |||
| Dimension E | E | 1.20 - 1.40 | mm | |||
| Dimension E1 | E1 | 2.25 - 2.55 | mm | |||
| Dimension e (Ref.) | e | 0.95 REF. | ||||
| Dimension e1 | e1 | 1.80 - 2.00 | mm | |||
| Dimension L (Ref.) | L | 0.55 REF. | ||||
| Dimension L1 | L1 | 0.30 - 0.50 | mm | |||
| Angle | 0 - 8 | |||||
2504101957_Siliup-SP2302CT2_C42372330.pdf
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