Surface Mount Dual N Channel MOSFET Siliup SP2002KDTL 20V Device Featuring 2KV ESD Protection for DC DC Converters
Key Attributes
Model Number:
SP2002KDTL
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
750mA
RDS(on):
250mΩ@4.5V;350mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
650mV@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
9pF
Number:
2 N-Channel
Output Capacitance(Coss):
19pF
Input Capacitance(Ciss):
35pF
Pd - Power Dissipation:
150mW
Gate Charge(Qg):
800pC@4.5V
Mfr. Part #:
SP2002KDTL
Package:
SOT-563
Product Description
Product Overview
The SP2002KDTL is a 20V Dual N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface mount device features ESD protection up to 2KV. It is ideal for applications such as battery switches and DC/DC converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 02K
- Package: SOT-563
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 20 | V | |||
| RDS(on) | @4.5V | 250 | m | |||
| ID | 0.75 | A | ||||
| RDS(on) | @2.5V | 350 | m | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 20 | V | |||
| Gate-Source Voltage | VGSS | 12 | V | |||
| Continuous Drain Current | ID | 0.75 | A | |||
| Pulse Drain Current | IDM | Tested | 3 | A | ||
| Power Dissipation | PD | 150 | mW | |||
| Thermal Resistance Junction-to-Ambient | RJA | 833 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 20 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=16V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | - | - | 10 | uA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 0.30 | 0.65 | 1.00 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=500mA | - | 250 | 380 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=2.5V , ID=200mA | - | 350 | 450 | m |
| Input Capacitance | Ciss | VDS=10V , VGS=0V , f=1MHz | - | 35 | - | pF |
| Output Capacitance | Coss | - | 19 | - | ||
| Reverse Transfer Capacitance | Crss | - | 9 | - | ||
| Total Gate Charge | Qg | VDS=10V , VGS=4.5V , ID=500mA | - | 0.8 | - | nC |
| Gate-Source Charge | Qgs | - | 0.3 | - | ||
| Gate-Drain Charge | Qg d | - | 0.16 | - | ||
| Turn-On Delay Time | td(on) | VDD=10V VGS=4.5V , RG=10 , ID=500mA | - | 4 | - | nS |
| Turn-On Rise Time | tr | - | 19 | - | ||
| Turn-Off Delay Time | td(off) | - | 10 | - | ||
| Turn-Off Fall Time | tf | - | 21 | - | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Package Information (SOT-563) | ||||||
| Symbol | Dimensions In Millimeters | Min | Max | |||
| A | 0.525 | 0.600 | ||||
| A1 | 0.000 | 0.050 | ||||
| e | 0.450 | 0.550 | ||||
| c | 0.090 | 0.160 | ||||
| D | 1.500 | 1.700 | ||||
| b | 0.170 | 0.270 | ||||
| E1 | 1.100 | 1.300 | ||||
| E | 1.500 | 1.700 | ||||
| L | 0.100 | 0.300 | ||||
| L1 | 0.200 | 0.400 | ||||
| Ref. | 7 | |||||
2504101957_Siliup-SP2002KDTL_C41355126.pdf
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