Surface mount silicon MOSFET Siliup SP6012BCTM designed for high current handling and power management
Key Attributes
Model Number:
SP6012BCTM
Product Custom Attributes
Pd - Power Dissipation:
65W
Configuration:
-
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
35A;45A
Operating Temperature -:
-55℃~+150℃
RDS(on):
15mΩ@10V;22mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
116pF;106pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
130pF;110pF
Input Capacitance(Ciss):
2.403nF;2.588nF
Gate Charge(Qg):
39nC@10V;63nC@10V
Mfr. Part #:
SP6012BCTM
Package:
TO-252-4L
Product Description
Product Overview
The SP6012BCTM is a 60V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this lead-free, surface-mount device is ideal for battery protection, load switching, and power management applications. It features 100% single-pulse avalanche energy testing for enhanced reliability.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: Complementary MOSFET
- Material: Silicon
- Certifications: Lead-free product acquired
Technical Specifications
| Parameter | Symbol | N-Channel Conditions | N-Channel Value | P-Channel Conditions | P-Channel Value | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 60V | -60V | V | ||
| RDS(on) Typ | RDS(on) | @10V | 15m | @-10V | 22m | m |
| RDS(on) Typ | RDS(on) | @4.5V | 17m | @-4.5V | 26m | m |
| Continuous Drain Current | ID | @10V | 35A | @-10V | -45A | A |
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 60 | -60 | V | ||
| Gate-Source Voltage | VGS | 20 | 20 | V | ||
| Continuous Drain Current (TC=25) | ID | 35 | -45 | A | ||
| Continuous Drain Current (TC=100) | ID | 23 | -30 | A | ||
| Pulsed Drain Current | IDM | 140 | -180 | A | ||
| Single Pulse Avalanche Energy | EAS | 100 | 132 | mJ | ||
| Power Dissipation (TC=25) | PD | 65 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 1.92 | /W | |||
| Storage Temperature Range | TSTG | -55 to 150 | ||||
| Operating Junction Temperature Range | TJ | -55 to 150 | ||||
| N-Channel Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 60 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=48V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.6 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=10A | - | 15 | 19 | m |
| Input Capacitance | Ciss | VDS=30V , VGS=0V , f=1MHz | - | 2403 | - | pF |
| Output Capacitance | Coss | - | - | 130 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 116 | - | pF |
| Total Gate Charge | Qg | VDS=30V , VGS=10V , ID=10A | - | 39 | - | nC |
| Gate-Source Charge | Qgs | - | - | 5.6 | - | nC |
| Gate-Drain Charge | Qgd | - | - | 9.5 | - | nC |
| Turn-On Delay Time | Td(on) | VDD=30V, VGS=10V , RG=3, ID=10A | - | 7.8 | - | nS |
| Rise Time | Tr | - | - | 48 | - | nS |
| Turn-Off Delay Time | Td(off) | - | - | 28 | - | nS |
| Fall Time | Tf | - | - | 30 | - | nS |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 35 | - | A |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 19 | - | nS |
| Reverse Recovery Charge | Qrr | - | - | 84 | - | nC |
| P-Channel Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -60 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=-48V , VGS=0V , TJ=25 | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | - | -1 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-15A | - | 22 | 28 | m |
| Input Capacitance | Ciss | VDS=-30V , VGS=0V , f=1MHz | - | 2588 | - | pF |
| Output Capacitance | Coss | - | - | 110 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 106 | - | pF |
| Total Gate Charge | Qg | VDS=-30V , VGS=-10V , ID=-10A | - | 63 | - | nC |
| Gate-Source Charge | Qgs | - | - | 18 | - | nC |
| Gate-Drain Charge | Qgd | - | - | 9.2 | - | nC |
| Turn-On Delay Time | Td(on) | VDD=-30V, VGS=-10V ,RG=4.5,ID=-10A | - | 62 | - | nS |
| Rise Time | Tr | - | - | 76 | - | nS |
| Turn-Off Delay Time | Td(off) | - | - | 371 | - | nS |
| Fall Time | Tf | - | - | 157 | - | nS |
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | - | - | -1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | -45 | - | A |
| Reverse Recovery Time | Trr | IS=-20A, di/dt=100A/us, TJ=25 | - | 50 | - | nS |
| Reverse Recovery Charge | Qrr | - | - | 59 | - | nC |
| Package Information (TO-252-4L) | ||||||
| Symbol | Dimensions (mm) Min. | Dimensions (mm) Max. | Notes | |||
| A | 2.20 | 2.40 | ||||
| A1 | 0 | 0.15 | ||||
| b | 0.40 | 0.60 | ||||
| b2 | 0.50 | 0.80 | ||||
| b3 | 5.20 | 5.50 | ||||
| c2 | 0.45 | 0.55 | ||||
| D | 5.40 | 5.80 | ||||
| D1 | 4.57 | - | ||||
| E | 6.40 | 6.80 | ||||
| E1 | 3.81 | - | ||||
| e | 1.27REF. | |||||
| F | 0.40 | 0.60 | ||||
| H | 9.40 | 10.20 | ||||
| L | 1.40 | 1.77 | ||||
| L1 | 2.40 | 3.00 | ||||
| L4 | 0.80 | 1.20 | ||||
2504101957_Siliup-SP6012BCTM_C42372338.pdf
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