60V Complementary MOSFET Siliup SP6023CTM Surface Mount for Battery Protection and Power Management
Product Overview
The SP6023CTM is a 60V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. designed for high power and current handling capabilities. It features a surface mount package and is available as a lead-free product. The SP6023CTM is suitable for applications such as Battery Protection, Load Switches, and Power Management.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: Complementary MOSFET
- Package: TO-252-4L
- Certifications: Lead free product is acquired
Technical Specifications
| Parameter | Symbol | N-Channel Conditions | N-Channel Min. | N-Channel Typ. | N-Channel Max. | N-Channel Unit | P-Channel Conditions | P-Channel Min. | P-Channel Typ. | P-Channel Max. | P-Channel Unit |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | -60 | V | ||||||
| Gate-Source Voltage | VGS | 20 | V | 20 | V | ||||||
| Continuous Drain Current (TC=25) | ID | 20 | A | -35 | A | ||||||
| Continuous Drain Current (TC=100) | ID | 23 | A | -40 | A | ||||||
| Pulsed Drain Current | IDM | 140 | A | -240 | A | ||||||
| Single Pulse Avalanche Energy | EAS | (VDD=30V, VGS=10V, L=0.5mH, RG=25) | 40 | mJ | (VDD=-30V, VGS=-10V, L=0.5mH, RG=25) | 115 | mJ | ||||
| Power Dissipation (TC=25) | PD | 48 | W | ||||||||
| Thermal Resistance Junction-to-Case | RJC | 2.6 | /W | ||||||||
| Storage Temperature Range | TSTG | -55 | 150 | -55 | 150 | ||||||
| Operating Junction Temperature Range | TJ | -55 | 150 | -55 | 150 | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 60 | V | VGS=0V , ID=-250uA | -60 | V | ||||
| Drain-Source Leakage Current | IDSS | VDS=48V , VGS=0V , TJ=25 | 1 | uA | VDS=-48V , VGS=0V , TJ=25 | -1 | uA | ||||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | VGS=20V , VDS=0V | 100 | nA | ||||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.6 | 2.5 | V | VGS=VDS , ID =-250uA | -1 | -1.7 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=2A | 23 | 29 | m | VGS =-10V, ID =-2A | 30 | 38 | m | ||
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=1A | 30 | 40 | m | VGS =-4.5V, ID =-1A | 35 | 47 | m | ||
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | 1640 | pF | VDS=-30V , VGS=0V , f=1MHz | 2417 | pF | ||||
| Output Capacitance | Coss | 120 | pF | 179 | pF | ||||||
| Reverse Transfer Capacitance | Crss | 106 | pF | 120 | pF | ||||||
| Total Gate Charge | Qg | VDS=48V , VGS=4.5V , ID=10A | 42 | nC | VDS=-30V , VGS=-10V , ID=-6A | 46.5 | nC | ||||
| Gate-Source Charge | Qgs | 8 | nC | 9.1 | nC | ||||||
| Gate-Drain Charge | Qg d | 11.5 | nC | 9.2 | nC | ||||||
| Turn-On Delay Time | Td(on) | VDD=30V VGS=10V , RG=3, ID=10A | 9 | nS | VDD=-30V VGS=-10V , RG=3, ID=-6A | 9.8 | nS | ||||
| Rise Time | Tr | 10.5 | 6.1 | ||||||||
| Turn-Off Delay Time | Td(off) | 36 | 44 | ||||||||
| Fall Time | Tf | 5 | 12.7 | ||||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | 1.2 | V | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||||
| Maximum Body-Diode Continuous Current | IS | 20 | A | -35 | A | ||||||
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, Tj=25 | 35 | nS | IS=-9A, di/dt=-100A/us, Tj=25 | 30 | nS | ||||
| Reverse Recovery Charge | Qrr | 53 | nC | 62 | nC |
Device Code: SP6023CTM
Order Information: SP6023CTM, TO-252-4L, 2500 Units/Tape
Package Dimensions (TO-252-4L):
| Symbol | Dimensions In Millimeters (Min.) | Dimensions In Millimeters (Max.) |
|---|---|---|
| A | 2.20 | 2.40 |
| A1 | 0 | 0.15 |
| b | 0.40 | 0.60 |
| b2 | 0.50 | 0.80 |
| b3 | 5.20 | 5.50 |
| c2 | 0.45 | 0.55 |
| D | 5.40 | 5.80 |
| D1 | 4.57 | - |
| E | 6.40 | 6.80 |
| E1 | 3.81 | - |
| e | 1.27REF. | |
| F | 0.40 | 0.60 |
| H | 9.40 | 10.20 |
| L | 1.40 | 1.77 |
| L1 | 2.40 | 3.00 |
| L4 | 0.80 | 1.20 |
2504101957_Siliup-SP6023CTM_C41355095.pdf
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