60V Complementary MOSFET Siliup SP6023CTM Surface Mount for Battery Protection and Power Management

Key Attributes
Model Number: SP6023CTM
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
20A;35A
RDS(on):
23mΩ@10V;30mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA;1.7V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
106pF;120pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
120pF;179pF
Pd - Power Dissipation:
48W
Input Capacitance(Ciss):
1.64nF;2.417nF
Gate Charge(Qg):
42nC@4.5V;46.5nC@10V
Mfr. Part #:
SP6023CTM
Package:
TO-252-4L
Product Description

Product Overview

The SP6023CTM is a 60V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. designed for high power and current handling capabilities. It features a surface mount package and is available as a lead-free product. The SP6023CTM is suitable for applications such as Battery Protection, Load Switches, and Power Management.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Line: Complementary MOSFET
  • Package: TO-252-4L
  • Certifications: Lead free product is acquired

Technical Specifications

Parameter Symbol N-Channel Conditions N-Channel Min. N-Channel Typ. N-Channel Max. N-Channel Unit P-Channel Conditions P-Channel Min. P-Channel Typ. P-Channel Max. P-Channel Unit
Drain-Source Voltage VDS 60 V -60 V
Gate-Source Voltage VGS 20 V 20 V
Continuous Drain Current (TC=25) ID 20 A -35 A
Continuous Drain Current (TC=100) ID 23 A -40 A
Pulsed Drain Current IDM 140 A -240 A
Single Pulse Avalanche Energy EAS (VDD=30V, VGS=10V, L=0.5mH, RG=25) 40 mJ (VDD=-30V, VGS=-10V, L=0.5mH, RG=25) 115 mJ
Power Dissipation (TC=25) PD 48 W
Thermal Resistance Junction-to-Case RJC 2.6 /W
Storage Temperature Range TSTG -55 150 -55 150
Operating Junction Temperature Range TJ -55 150 -55 150
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 60 V VGS=0V , ID=-250uA -60 V
Drain-Source Leakage Current IDSS VDS=48V , VGS=0V , TJ=25 1 uA VDS=-48V , VGS=0V , TJ=25 -1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V 100 nA VGS=20V , VDS=0V 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1.0 1.6 2.5 V VGS=VDS , ID =-250uA -1 -1.7 -2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V , ID=2A 23 29 m VGS =-10V, ID =-2A 30 38 m
Static Drain-Source On-Resistance RDS(ON) VGS=4.5V , ID=1A 30 40 m VGS =-4.5V, ID =-1A 35 47 m
Input Capacitance Ciss VDS=15V , VGS=0V , f=1MHz 1640 pF VDS=-30V , VGS=0V , f=1MHz 2417 pF
Output Capacitance Coss 120 pF 179 pF
Reverse Transfer Capacitance Crss 106 pF 120 pF
Total Gate Charge Qg VDS=48V , VGS=4.5V , ID=10A 42 nC VDS=-30V , VGS=-10V , ID=-6A 46.5 nC
Gate-Source Charge Qgs 8 nC 9.1 nC
Gate-Drain Charge Qg d 11.5 nC 9.2 nC
Turn-On Delay Time Td(on) VDD=30V VGS=10V , RG=3, ID=10A 9 nS VDD=-30V VGS=-10V , RG=3, ID=-6A 9.8 nS
Rise Time Tr 10.5 6.1
Turn-Off Delay Time Td(off) 36 44
Fall Time Tf 5 12.7
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 1.2 V VGS=0V , IS=-1A , TJ=25 -1.2 V
Maximum Body-Diode Continuous Current IS 20 A -35 A
Reverse Recovery Time Trr IS=20A, di/dt=100A/us, Tj=25 35 nS IS=-9A, di/dt=-100A/us, Tj=25 30 nS
Reverse Recovery Charge Qrr 53 nC 62 nC

Device Code: SP6023CTM

Order Information: SP6023CTM, TO-252-4L, 2500 Units/Tape

Package Dimensions (TO-252-4L):

Symbol Dimensions In Millimeters (Min.) Dimensions In Millimeters (Max.)
A 2.20 2.40
A1 0 0.15
b 0.40 0.60
b2 0.50 0.80
b3 5.20 5.50
c2 0.45 0.55
D 5.40 5.80
D1 4.57 -
E 6.40 6.80
E1 3.81 -
e 1.27REF.
F 0.40 0.60
H 9.40 10.20
L 1.40 1.77
L1 2.40 3.00
L4 0.80 1.20

2504101957_Siliup-SP6023CTM_C41355095.pdf

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