DC DC converter component Siliup SP40P04TQ 40V P Channel MOSFET with typical RDSon of 4.8 milliohms at 10 volts

Key Attributes
Model Number: SP40P04TQ
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
100A
RDS(on):
4.8mΩ@10V;6.5mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Reverse Transfer Capacitance (Crss@Vds):
441pF
Number:
1 P-Channel
Output Capacitance(Coss):
508pF
Input Capacitance(Ciss):
6.456nF
Pd - Power Dissipation:
150W
Gate Charge(Qg):
74nC@10V
Mfr. Part #:
SP40P04TQ
Package:
TO-220-3L
Product Description

Product Overview

The SP40P04TQ is a 40V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low Rdson, with a typical RDS(on) of 4.8m at 10V and 6.5m at 4.5V. The device is 100% tested for single pulse avalanche energy. It is suitable for power switching applications, DC-DC converters, and power management.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP40P04TQ
  • Package: TO-220-3L (1:G 2:D 3:S)
  • Marking: 40P04 :Product code, * :Week code

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
Product Summary
V(BR)DSS V(BR)DSS -40 V
RDS(on)TYP RDS(on) @10V 4.8 6 m
RDS(on)TYP RDS(on) @4.5V 6.5 8.6 m
ID ID -100 A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage VDS -40 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current (Tc=25) ID -100 A
Continuous Drain Current (Tc=100) ID -67 A
Pulsed Drain Current IDM -400 A
Single Pulse Avalanche Energy EAS 529 mJ
Power Dissipation (Tc=25) PD 150 W
Thermal Resistance Junction-to-Case RJC 0.83 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=-250uA -40 V
Drain Cut-Off Current IDSS VDS=-32V , VGS=0V , TJ=25 -1 A
Gate Leakage Current IGSS VGS=20V , VDS=0V 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =-250uA -1.0 -1.7 -2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=-10V , ID=-20A 4.8 6 m
Static Drain-Source On-Resistance RDS(ON) VGS=-4.5V , ID=-20A 6.5 8.6 m
Dynamic Characteristics
Input Capacitance Ciss VDS=-20V,VGS=0V,f=1MHz 6456 pF
Output Capacitance Coss 508
Reverse Transfer Capacitance Crss 441
Total Gate Charge Qg VDS=-20V,VGS=-10V,ID=-20A 74 nC
Gate-Source Charge Qgs 22
Gate-Drain Charge Qg 18
Switching Characteristics
Turn-On Delay Time td(on) VDD=-20V,ID=-20A,VGS=-10V,RG=2. 4 10 nS
Rise Time tr 15
Turn-Off Delay Time td(off) 93
Fall Time tf 20
Source-Drain Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = -1A, VGS = 0V -1.2 V
Maximum Body-Diode Continuous Current IS -100 A
Reverse Recovery Time Trr IS=-20A,di/dt=100A/us,TJ=25 30 nS
Reverse Recovery Charge Qrr 21 nC
TO-220-3L Package Information
Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 4.400 4.600 0.173 0.181
A1 2.250 2.550 0.089 0.100
b 0.710 0.910 0.028 0.036
b1 1.170 1.370 0.046 0.054
c 0.330 0.650 0.013 0.026
c1 1.200 1.400 0.047 0.055
D 9.910 10.250 0.390 0.404
E 8.950 9.750 0.352 0.384
E1 12.650 13.050 0.498 0.514
e 2.540 TYP. 0.100 TYP.
e1 4.980 5.180 0.196 0.204
F 2.650 2.950 0.104 0.116
H 7.900 8.100 0.311 0.319
h 0.000 0.300 0.000 0.012
L 12.900 13.400 0.508 0.528
L1 2.850 3.250 0.112 0.128
V 6.900 REF. 0.276 REF.
3.400 3.800 0.134 0.150

2504101957_Siliup-SP40P04TQ_C41355037.pdf

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