Siliup SP60N13TH N Channel MOSFET 60V Featuring Low Gate Charge and Fast Switching in TO 252 Package
Key Attributes
Model Number:
SP60N13TH
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
50A
RDS(on):
13mΩ@10V;17mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Reverse Transfer Capacitance (Crss@Vds):
116pF
Number:
1 N-channel
Output Capacitance(Coss):
130pF
Pd - Power Dissipation:
55W
Input Capacitance(Ciss):
2.403nF
Gate Charge(Qg):
39nC@10V
Mfr. Part #:
SP60N13TH
Package:
TO-252
Product Description
Product Overview
The SP60N13TH is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on). This MOSFET is 100% tested for single pulse avalanche energy and is suitable for applications such as DC-DC converters and load switching. It comes in a TO-252 package.
Product Attributes
- Brand: Siliup
- Technology: Siliup Semiconductor Technology Co. Ltd.
- Model Code: SP60N13TH
- Device Code: 60N13
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 60 | V | ||||
| RDS(on) | @10V | 13 | m | |||
| RDS(on) | @4.5V | 17 | m | |||
| ID | 50 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25, unless otherwise noted) | 60 | V | ||
| Gate-Source Voltage | VGS | (Ta=25, unless otherwise noted) | 20 | V | ||
| Continuous Drain Current | ID | (TC=25) | 50 | A | ||
| Continuous Drain Current | ID | (TC=100) | 33 | A | ||
| Pulsed Drain Current | IDM | 200 | A | |||
| Single Pulse Avalanche Energy | EAS | 1 | 156 | mJ | ||
| Power Dissipation | PD | (TC=25) | 55 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 2.27 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 60 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=48V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.8 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=20A | - | 13 | 17 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=15A | - | 17 | 23 | m |
| Input Capacitance | Ciss | VDS=30V , VGS=0V , f=1MHz | - | 2403 | - | pF |
| Output Capacitance | Coss | - | 130 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 116 | - | pF | |
| Total Gate Charge | Qg | VDS=30V , VGS=10V , ID=10A | - | 39 | - | nC |
| Gate-Source Charge | Qgs | - | 5.6 | - | nC | |
| Gate-Drain Charge | Qgd | - | 9.5 | - | nC | |
| Turn-On Delay Time | Td(on) | VDD=30V, VGS=10V , RG=3, ID=10A | - | 7.8 | - | nS |
| Rise Time | Tr | - | 48 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 28 | - | nS | |
| Fall Time | Tf | - | 30 | - | nS | |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 50 | A | |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 19 | - | nS |
| Reverse Recovery Charge | Qrr | - | 84 | - | nC | |
| Package Information | ||||||
| Package Type | TO-252 | |||||
| Pin Configuration | (1:G 2:D 3:S) | |||||
| Order Information | Device | Package | Unit/Tape | |||
| SP60N13TH | TO-252 | 2500 | ||||
2504101957_Siliup-SP60N13TH_C41354976.pdf
Related Products
Integrated bias resistor digital transistor YANGJIE DTC143ECA suitable for surface mount and inverter circuit
Product OverviewThe DTC143ECA is a digital transistor with built-in resistors, designed for surface mount applications. Its integrated bias resistors simplify inverter circuit configuration by eliminating the need for external input resistors. This component is manufactured by Yangzhou Yangjie ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW
Product OverviewThe S8050-L through S8050-H series are NPN general-purpose amplifiers manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. These components are designed for general amplification applications and feature an epoxy casing that meets UL-94 V-0 flammability rating. Halogen...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
