60V P Channel MOSFET Siliup SP60P25TH Featuring Low RDS on and Fast Switching for Load Switching
Key Attributes
Model Number:
SP60P25TH
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
40A
RDS(on):
25mΩ@10V;30mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
120pF
Number:
1 P-Channel
Output Capacitance(Coss):
179pF
Pd - Power Dissipation:
86W
Input Capacitance(Ciss):
2.417nF
Gate Charge(Qg):
46.5nC@10V
Mfr. Part #:
SP60P25TH
Package:
TO-252-2L
Product Description
Product Overview
The SP60P25TH is a 60V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) with values of 25m at -10V and 30m at -4.5V. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for applications such as DC-DC converters and load switching. It comes in a TO-252 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: SP60P25TH
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (TC=25) | ID | (TC=25) | -40 | A | ||
| Continuous Drain Current (TC=100) | ID | (TC=100) | -27 | A | ||
| Pulsed Drain Current | IDM | -160 | A | |||
| Single Pulse Avalanche Energy | EAS | 210 | mJ | |||
| Power Dissipation (TC=25) | PD | (TC=25) | 60 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 2.08 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -60 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-48V , VGS=0V , TJ=25 | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.0 | -1.7 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-20A | 25 | 35 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-15A | 30 | 42 | m | |
| Input Capacitance | Ciss | VDS=-30V , VGS=0V , f=1MHz | 2417 | pF | ||
| Output Capacitance | Coss | 179 | pF | |||
| Reverse Transfer Capacitance | Crss | 120 | pF | |||
| Total Gate Charge | Qg | VDS=-30V , VGS=-10V , ID=-6A | 46.5 | nC | ||
| Gate-Source Charge | Qgs | 9.1 | nC | |||
| Gate-Drain Charge | Qgd | 9.2 | nC | |||
| Turn-On Delay Time | Td(on) | VDD=-30V VGS=-10V , RG=3, ID=-6A | 9.8 | nS | ||
| Rise Time | Tr | 6.1 | nS | |||
| Turn-Off Delay Time | Td(off) | 44 | nS | |||
| Fall Time | Tf | 12.7 | nS | |||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | 1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | -40 | A | |||
| Reverse Recovery Time | Trr | IS=-20A, di/dt=-100A/us, Tj=25 | 25 | nS | ||
| Reverse Recovery Charge | Qrr | 55 | nC |
Package Information (TO-252)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 2.200 | 2.400 | 0.087 | 0.094 |
| A1 | 0.000 | 0.127 | 0.000 | 0.005 |
| b | 0.660 | 0.860 | 0.026 | 0.034 |
| c | 0.460 | 0.580 | 0.018 | 0.023 |
| D | 6.500 | 6.700 | 0.256 | 0.264 |
| D1 | 5.100 | 5.460 | 0.201 | 0.215 |
| D2 | 4.830 REF. | 0.190 REF. | ||
| E | 6.000 | 6.200 | 0.236 | 0.244 |
| e | 2.186 | 2.386 | 0.086 | 0.094 |
| L | 9.800 | 10.400 | 0.386 | 0.409 |
| L1 | 2.900 REF. | 0.114 REF. | ||
| L2 | 1.400 | 1.700 | 0.055 | 0.067 |
| L3 | 1.600 REF. | 0.063 REF. | ||
| L4 | 0.600 | 1.000 | 0.024 | 0.039 |
| 1.100 | 1.300 | 0.043 | 0.051 | |
| 0 | 8 | 0 | 8 | |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| V | 5.350 REF. | 0.211 REF. |
Order Information
| Device | Package | Unit/Tape |
|---|---|---|
| SP60P25TH | TO-252 | 2500 |
2504101957_Siliup-SP60P25TH_C41355212.pdf
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