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quality SOT 23 Package P Channel MOSFET 16V Siliup SP16P50T2 Designed for Battery Switch and DC DC Converter factory
quality SOT 23 Package P Channel MOSFET 16V Siliup SP16P50T2 Designed for Battery Switch and DC DC Converter factory

SOT 23 Package P Channel MOSFET 16V Siliup SP16P50T2 Designed for Battery Switch and DC DC Converter

Key Attributes
Model Number: SP16P50T2
Product Custom Attributes
Drain To Source Voltage:
16V
Current - Continuous Drain(Id):
3A
RDS(on):
50mΩ@4.5V;60mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
650mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
187pF
Number:
1 P-Channel
Output Capacitance(Coss):
293pF
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
475pF
Gate Charge(Qg):
4.5nC@2.5V
Mfr. Part #:
SP16P50T2
Package:
SOT-23
Product Description

Product Overview

The SP16P50T2 is a 16V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. This surface mount device offers high power and current handling capabilities, making it suitable for applications such as battery switches and DC/DC converters. It is available in a SOT-23 package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Type: P-Channel MOSFET
  • Package: SOT-23
  • Device Code: 2305B

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS -16 V
Static Drain-Source On-Resistance RDS(on) -4.5V 50 90 m
Static Drain-Source On-Resistance RDS(on) -2.5V 60 130 m
Continuous Drain Current ID -3 A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage VDSS -16 V
Gate-Source Voltage VGSS 12 V
Continuous Drain Current ID -3 A
Pulse Drain Current IDM Tested -12 A
Power Dissipation PD 350 mW
Thermal Resistance Junction-to-Ambient RJA 357 C/W
Storage Temperature Range TSTG -55 150 C
Operating Junction Temperature Range TJ -55 150 C
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=-250A -16 V
Drain-Source Leakage Current IDSS VDS=-13V , VGS=0V -1 uA
Gate-Source Leakage Current IGSS VGS=12V , VDS=0V 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS , ID=-250A -0.5 -0.65 -1.0 V
Static Drain-Source On-Resistance RDS(ON) VGS=-4.5V , ID=-500mA 50 90 m
Static Drain-Source On-Resistance RDS(ON) VGS=-2.5V , ID=-500mA 60 130 m
Input Capacitance Ciss VDS=-4V , VGS=0V , f=1MHz 475 pF
Output Capacitance Coss 293
Reverse Transfer Capacitance Crss 187
Total Gate Charge Qg VDS=-4V , VGS=-2.5V , ID=-3A 4.5 nC
Gate-Source Charge Qgs 1.2
Gate-Drain Charge Qgd 1.6
Turn-On Delay Time td(on) VDD=-4V VGS=-4.5V , RG=1 , ID=-3A 13 nS
Turn-On Rise Time tr 35
Turn-Off Delay Time td(off) 32
Turn-Off Fall Time tf 10
Diode Forward Voltage VSD VGS=0V , IS=-1A , TJ=25 -1.2 V
Package Information (SOT-23)
Dimension Symbol Min. Max. Unit
A A 0.90 1.15
A1 A1 0.00 0.10
A2 A2 0.90 1.05
b b 0.30 0.50
c c 0.08 0.15
D D 2.80 3.00
E E 1.20 1.40
E1 E1 2.25 2.55
e e 0.95 REF.
e1 e1 1.80 2.00
L L 0.55 REF.
L1 L1 0.30 0.50
0 8

2504101957_Siliup-SP16P50T2_C41354957.pdf

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