30V N Channel MOSFET Siliup SP30N22T2 optimized for power management in battery switch applications
Key Attributes
Model Number:
SP30N22T2
Product Custom Attributes
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
22mΩ@10V
Gate Threshold Voltage (Vgs(th)):
900mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
53pF
Number:
-
Output Capacitance(Coss):
68pF
Pd - Power Dissipation:
1.4W
Input Capacitance(Ciss):
785pF
Gate Charge(Qg):
18nC@10V
Mfr. Part #:
SP30N22T2
Package:
SOT-23
Product Description
Product Overview
The SP30N22T2 is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface-mount MOSFET is suitable for applications such as battery switches and DC/DC converters. It offers a low on-resistance at various gate-source voltages, making it an efficient component for power management solutions.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: N-Channel MOSFET
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | 30 | V | |||
| RDS(on)TYP | RDS(on)TYP | @10V | 22 | m | ||
| @4.5V | 25 | m | ||||
| @2.5V | 35 | m | ||||
| ID | ID | 6 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 30 | V | |||
| Gate-Source Voltage | VGSS | 12 | V | |||
| Continuous Drain Current | ID | 6 | A | |||
| Pulse Drain Current | IDM | Tested | 24 | A | ||
| Power Dissipation | PD | 1.4 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 89 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 30 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=24V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 0.7 | 0.9 | 1.4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID =5.8A | - | 22 | 28 | m |
| VGS=4.5V , ID =5A | - | 25 | 35 | |||
| VGS=2.5V , ID =4A | - | 35 | 50 | |||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - | 785 | - | pF |
| Output Capacitance | Coss | - | 68 | - | ||
| Reverse Transfer Capacitance | Crss | - | 53 | - | ||
| Total Gate Charge | Qg | VDS=15V , VGS=10V , ID=3A | - | 18 | - | nC |
| Gate-Source Charge | Qgs | - | 3 | - | ||
| Gate-Drain Charge | Qg | - | 2.2 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=15V VGS=10V , RG=3 , ID=3A | - | 5 | - | nS |
| Turn-On Rise Time | tr | - | 11 | - | ||
| Turn-Off Delay Time | td(off) | - | 25 | - | ||
| Turn-Off Fall Time | tf | - | 3 | - | ||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Package Information | ||||||
| Package Type | SOT-23 | |||||
| Order Information | Device | Package | Unit/Tape | |||
| SP30N22T2 | SOT-23 | 3000 | ||||
| SOT-23 Package Dimensions (Millimeters) | ||||||
| Symbol | Dimensions | Min. | Max. | |||
| A | 0.90 | 1.15 | ||||
| A1 | 0.00 | 0.10 | ||||
| A2 | 0.90 | 1.05 | ||||
| b | 0.30 | 0.50 | ||||
| c | 0.08 | 0.15 | ||||
| D | 2.80 | 3.00 | ||||
| E | 1.20 | 1.40 | ||||
| E1 | 2.25 | 2.55 | ||||
| e | (REF.) | 0.95 | ||||
| e1 | 1.80 | 2.00 | ||||
| L | (REF.) | 0.55 | ||||
| L1 | 0.30 | 0.50 | ||||
| 0 | 8 | |||||
2504101957_Siliup-SP30N22T2_C41354915.pdf
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