40V N Channel MOSFET Siliup SP40N03TH with Low Gate Charge and Single Pulse Avalanche Energy Testing
Key Attributes
Model Number:
SP40N03TH
Product Custom Attributes
Drain To Source Voltage:
40V
Configuration:
-
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
380pF@20V
Number:
1 N-channel
Input Capacitance(Ciss):
5.4nF@20V
Pd - Power Dissipation:
120W
Gate Charge(Qg):
75nC@10V
Mfr. Part #:
SP40N03TH
Package:
TO-252
Product Description
Product Overview
The SP40N03TH is a 40V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) for efficient operation. This MOSFET is designed for applications such as DC-DC converters and load switching, with 100% single pulse avalanche energy testing for reliability.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: SP40N03TH
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 40 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=32V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=20A | - | 3.5 | 4.5 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=15A | - | 4.5 | 6.5 | m |
| Input Capacitance | Ciss | VDS=20V , VGS=0V , f=1MHz | - | 5400 | - | pF |
| Output Capacitance | Coss | - | 970 | - | ||
| Reverse Transfer Capacitance | Crss | - | 380 | - | ||
| Total Gate Charge | Qg | VDS=20V , VGS=10V , ID=20A | - | 75 | - | nC |
| Gate-Source Charge | Qgs | - | 10.5 | - | ||
| Gate-Drain Charge | Qgd | - | 17 | - | ||
| Turn-On Delay Time | Td(on) | VDD=20V, VGS=10V , RG=3, ID=2A | - | 15 | - | nS |
| Rise Time | Tr | - | 18 | - | ||
| Turn-Off Delay Time | Td(off) | - | 52 | - | ||
| Fall Time | Tf | - | 23 | - | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 120 | A | |
| Reverse Recovery Time | Trr | IS=30A, di/dt=100A/us, TJ=25 | - | 25 | - | nS |
| Reverse Recovery Charge | Qrr | - | 16 | - | nC | |
| Drain-Source Voltage | VDS | (Ta=25, unless otherwise noted) | - | - | 40 | V |
| Gate-Source Voltage | VGS | (Ta=25, unless otherwise noted) | - | - | 20 | V |
| Continuous Drain Current | ID | (TC=25) | - | - | 120 | A |
| Continuous Drain Current | ID | (TC=100) | - | - | 80 | A |
| Pulsed Drain Current | IDM | - | - | 480 | A | |
| Single Pulse Avalanche Energy | EAS | 1 | - | - | 350 | mJ |
| Power Dissipation | PD | (TC=25) | - | - | 120 | W |
| Thermal Resistance Junction-to-Case | RJC | - | 1.04 | - | /W | |
| Storage Temperature Range | TSTG | -55 | - | 150 | ||
| Operating Junction Temperature Range | TJ | -55 | - | 150 |
TO-252 Package Information (Dimensions in Millimeters)
| Symbol | Dimensions | Min. | Max. |
|---|---|---|---|
| A | 2.200 | 2.400 | |
| A1 | 0.000 | 0.127 | |
| b | 0.660 | 0.860 | |
| c | 0.460 | 0.580 | |
| D | 6.500 | 6.700 | |
| D1 | 5.100 | 5.460 | |
| D2 | 4.830 REF. | ||
| E | 6.000 | 6.200 | |
| e | 2.186 | 2.386 | |
| L | 9.800 | 10.400 | |
| L1 | 2.900 REF. | ||
| L2 | 1.400 | 1.700 | |
| L3 | 1.600 REF. | ||
| L4 | 0.600 | 1.000 | |
| 1.100 | 1.300 | ||
| 0 | 8 | ||
| h | 0.000 | 0.300 | |
| V | 5.350 REF. |
2410311049_Siliup-SP40N03TH_C42372343.pdf
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