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quality Surface Mount Dual N Channel MOSFET Siliup 2N7002KDTL 60V with High Power Handling and ESD Protection factory
quality Surface Mount Dual N Channel MOSFET Siliup 2N7002KDTL 60V with High Power Handling and ESD Protection factory

Surface Mount Dual N Channel MOSFET Siliup 2N7002KDTL 60V with High Power Handling and ESD Protection

Key Attributes
Model Number: 2N7002KDTL
Product Custom Attributes
Pd - Power Dissipation:
150mW
Drain To Source Voltage:
60V
Configuration:
-
Current - Continuous Drain(Id):
300mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.7Ω@10V;1.8Ω@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
2 N-Channel
Output Capacitance(Coss):
10pF
Input Capacitance(Ciss):
28pF
Gate Charge(Qg):
1.7nC@4.5V
Mfr. Part #:
2N7002KDTL
Package:
SOT-563
Product Description

Product Overview

The 2N7002KDTL is a 60V Dual N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for surface mount applications, it offers high power and current handling capability with ESD protection up to 2KV. This MOSFET is suitable for battery switches and DC/DC converters.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Device Code: 72K
  • Package: SOT-563
  • Technology: Silicon

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS 60 V
Static Drain-Source On-Resistance RDS(on) @10V 1.7
Static Drain-Source On-Resistance RDS(on) @4.5V 1.8
Continuous Drain Current ID 300 mA
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage VGSS 20 V
Continuous Drain Current ID 300 mA
Pulse Drain Current IDM Tested 1200 mA
Power Dissipation PD 150 mW
Thermal Resistance Junction-to-Ambient RJA 833 C/W
Storage Temperature Range TSTG -55 150 C
Operating Junction Temperature Range TJ -55 150 C
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250A 60 - - V
Drain-Source Leakage Current IDSS VDS=48V , VGS=0V - - 1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - - 10 uA
Gate Threshold Voltage VGS(th) VDS=VGS , ID=250A 1 1.5 2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS =10V, ID =200mA - 1.7 3
Static Drain-Source On-Resistance RDS(ON) VGS =4.5V, ID =200mA - 1.8 4
Dynamic Characteristics
Input Capacitance Ciss VDS=25V , VGS=0V , f=1MHz - 28 - pF
Output Capacitance Coss - 10 - pF
Reverse Transfer Capacitance Crss - 5 - pF
Total Gate Charge Qg VDS=10V , VGS=4.5V , ID=300mA - 1.7 - nC
Gate-Source Charge Qgs - 0.35 -
Gate-Drain Charge Qg d - 0.5 -
Switching Characteristics
Turn-On Delay Time td(on) VDD=30V VGS=10V , RG=25 , ID=300mA - 3 - nS
Turn-On Rise Time tr - 17 -
Turn-Off Delay Time td(off) - 10 -
Turn-Off Fall Time tf - 21 -
Source-Drain Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Package Information (SOT-563)
Symbol Dimensions In Millimeters Min Max
A 0.525 0.600
A1 0.000 0.050
e 0.450 0.550
c 0.090 0.160
D 1.500 1.700
b 0.170 0.270
E1 1.100 1.300
E 1.500 1.700
L 0.100 0.300
L1 0.200 0.400
7Ref.

2504101957_Siliup-2N7002KDTL_C41354823.pdf

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