Low On Resistance 30V N Channel MOSFET Siliup SP2304T2J for Power Management Applications

Key Attributes
Model Number: SP2304T2J
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
3.3A
RDS(on):
75mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Reverse Transfer Capacitance (Crss@Vds):
17pF
Number:
1 N-channel
Output Capacitance(Coss):
45pF
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
235pF
Gate Charge(Qg):
6.7nC@10V
Mfr. Part #:
SP2304T2J
Package:
SOT-23
Product Description

Product Overview

The SP2304T2J is a 30V N-Channel MOSFET designed for efficient power management in various electronic applications. Featuring low on-resistance (RDS(on)) at different gate voltages (37m@10V, 57m@4.5V) and a continuous drain current (ID) of 3.3A, this MOSFET is suitable for DC/DC converters and load switching in portable devices. Its TrenchFET Power MOSFET technology ensures high performance and reliability.

Product Attributes

  • Brand: Shanghai Siliup Semiconductor Technology Co. Ltd.
  • Model: SP2304T2J
  • Technology: TrenchFET Power MOSFET
  • Channel Type: N-Channel
  • Package: SOT-23
  • Marking: SP2304T2J
  • Version: Ver-1.0
  • Date: 2021/01

Technical Specifications

Parameter Symbol Test Condition Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS 30 V
On-Resistance (Typ.) RDS(on) @10V 37 m
On-Resistance (Typ.) RDS(on) @4.5V 57 m
Continuous Drain Current ID 3.3 A
Absolute Maximum Ratings (Ta=25 unless otherwise noted)
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current ID 3.3 A
Pulsed Drain Current IDM 15 A
Continuous Source-Drain Diode Current IS 0.9 A
Maximum Power Dissipation PD 0.35 W
Thermal Resistance Junction to Ambient (t5s) RJA 357 /W
Junction Temperature TJ 150
Storage Temperature TSTG -55 ~ +150
Electrical Characteristics (TA=25 oC, unless otherwise noted)
Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250A 30 V
Zero gate voltage drain current IDSS VDS =30V,VGS = 0V 1 A
Gate-body leakage current IGSS VGS =20V, VDS = 0V 100 nA
Gate threshold voltage VGS(th) VDS =VGS, ID =250A 1 1.6 2.2 V
Drain-source on-resistance RDS(on) VGS =10V, ID =3.2A 37 60 m
Drain-source on-resistance RDS(on) VGS =4.5V, ID =2.8A 57 75 m
Forward transconductance gFS VDS =4.5V, ID =2.5A 2.5 S
Dynamic Characteristics
Total gate charge Qg VDS =15V,VGS =10V,ID =3.4A 4.5 6.7 nC
Gate-source charge Qgs VDS =15V,VGS =4.5V,ID =3.4A 2.1 3.2
Gate-drain charge Qgd 0.85
Gate resistance Rg f =1.0MHz 0.8
Input Capacitance Ciss VDS =15V,VGS =0V,f =1MHz 235 pF
Output Capacitance Coss 45
Reverse Transfer Capacitance Crss 17
Turn-on delay time td(on) VDD=15V, RL=5.6, ID 2.7A, VGEN=4.5V,Rg=1 12 20 ns
Turn-on rise time tr 50 75
Turn-off delay time td(off) 12 20
Turn-off fall time tf 22 35
Turn-on delay time td(on) VDD=15V, RL=5.6, ID 2.7A, VGEN=10V,Rg=1 5 10 ns
Turn-on rise time tr 12 20
Turn-off delay time td(off) 10 15
Turn-off fall time tf 5 10
Source-Drain Diode Characteristics
Continuous source-drain diode current IS TC=25 1.4 A
Pulse diode forward current ISM 15 A
Body diode voltage VSD IS=2.7A,VGS=0V 1.2 V
Package Dimensions (SOT-23)
Symbol Dimensions In Millimeters Min. Max.
A 0.90 1.15
A1 0.00 0.10
A2 0.90 1.05
b 0.30 0.50
c 0.08 0.15
D 2.80 3.00
E 1.20 1.40
E1 2.25 2.55
e (REF.) 0.95
e1 (REF.) 1.80 2.00
L (REF.) 0.55
L1 0.30 0.50
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