N channel MOSFET Slkor SL2314 optimized for low inline power loss and operation in compact surface mount package
Product Overview
The SL2314 is an N-Channel logic enhancement mode power MOSFET manufactured using high cell density advanced trench technology. This technology is optimized for minimal on-state resistance, making it ideal for low voltage applications requiring low in-line power loss in a compact surface mount package. It offers super high design for extremely low RDS(ON) and exceptional on-resistance with maximum DC current capability.
Product Attributes
- Brand: SLKORMicro
- Certifications: Full RoHS compliance
- Package: SOT23-3L
Technical Specifications
| Parameter | Condition | Typical Value | Unit | Notes |
| RDS(ON) | VGS=4.5V, ID=3.0A | 25 | m | |
| VGS=2.5V, ID=2.5A | 55 | m | ||
| VGS=1.8V, ID=2.0A | 80 | m | ||
| Drain-Source Breakdown Voltage (V(BR)DSS) | VGS=0V, ID=250uA | 20 | V | |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, ID=250uA | 0.5 - 1.0 | V | |
| Continuous Drain Current (ID) | TC=25, VGS=10V | 4.5 | A | |
| Continuous Drain Current (ID) | TC=70, VGS=10V | 3.0 | A | |
| Pulsed Drain Current (IDM) | 20 | A | ||
| Power Dissipation (PD) | TA=25 | 1.5 | W | |
| Power Dissipation (PD) | TA=70 | 0.9 | W | |
| Operation Junction Temperature (TJ) | 150 | |||
| Storage Temperature Range (TSTG) | -55~+150 | |||
| Thermal Resistance (RJA) | Junction to Ambient | 90 | /W | |
| Total Gate Charge (Qg) | VDS=10V, VGS=4.5V, ID=5.0A | 11 - 13 | nC | |
| Input Capacitance (Ciss) | VDS=10V, VGS=0V, f=1MHz | 578 | pF | |
| Output Capacitance (Coss) | VDS=10V, VGS=0V, f=1MHz | 116 | pF | |
| Reverse Transfer Capacitance (Crss) | VDS=10V, VGS=0V, f=1MHz | 96 | pF | |
| Turn-On Time (Td(on)) | VDS=10V, ID=1.0A, VGEN=4.5V, RG=6 | 14.5 - 25 | nS | |
| Turn-Off Time (Td(off)) | VDS=10V, ID=1.0A, VGEN=4.5V, RG=6 | 46 - 67 | nS |
2208051030_Slkor-SL2314_C5122527.pdf
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