N Channel Enhancement Mode Transistor Slkor 2N7002KT with High Current Handling and Thermal Stability
Key Attributes
Model Number:
2N7002KT
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
100mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
13Ω@4.5V
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
7pF
Number:
1 N-channel
Output Capacitance(Coss):
12pF
Input Capacitance(Ciss):
18pF
Pd - Power Dissipation:
150mW
Gate Charge(Qg):
1.7nC@10V
Mfr. Part #:
2N7002KT
Package:
SOT-523
Product Description
Product Overview
This N-Channel Enhancement Mode Field Effect Transistor utilizes Trench Power LV MOSFET technology, offering high power and current handling capabilities. It is ESD protected up to 2.0KV (HBM) and is suitable for load/power switching, interfacing switching, and logic level shift applications.
Product Attributes
- Brand: SLKORMICRO
- Model: 2N7002KT
- Package: SOT-523
- Certifications: ESD Protected Up to 2.0KV (HBM)
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-source Voltage | VDS | 60 | V | |||
| Gate-source Voltage | VGS | ±20 | V | |||
| Drain Current | ID | 100 | mA | |||
| Pulsed Drain Current | IDM | 1.5 | A | |||
| Total Power Dissipation @ TA=25 | PD | @ TA=25 | 0.15 | W | ||
| Thermal Resistance Junction-to-Ambient @ Steady State | RJA | @ Steady State | 357 | / W | ||
| Junction and Storage Temperature Range | TJ ,TSTG | -55+150 | ||||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250A | 60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | 1 | µA | ||
| Gate-Body Leakage Current | IGSS | VGS= ±20V, VDS=0V | ±10 | µA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250µA | 0.8 | 1.5 | 2.2 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 10V, ID=100mA | 2.5 | 8.0 | Ω | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 4.5V, ID=10mA | 3.0 | 13.0 | Ω | |
| Diode Forward Voltage | VSD | IS=100mA,VGS=0V | 1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | 100 | mA | |||
| Input Capacitance | Ciss | VDS=30V,VGS=0V,f=1MHZ | 18 | pF | ||
| Output Capacitance | Coss | VDS=30V,VGS=0V,f=1MHZ | 12 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=30V,VGS=0V,f=1MHZ | 7 | pF | ||
| Total Gate Charge | Qg | VGS=10V,VDS=30V,ID=0.1A | 1.7 | nC | ||
| Gate Source Charge | Qgs | VGS=10V,VDS=30V,ID=0.1A | 0.19 | |||
| Gate Drain Charge | Qg d | VGS=10V,VDS=30V,ID=0.1A | 0.27 | |||
| Turn-on Delay Time | tD(on) | VGS=10V,VDD=30V,RG=6Ω,ID=0.1A | 5 | ns | ||
| Turn-off Delay Time | tD(off) | VGS=10V,VDD=30V,RG=6Ω,ID=0.1A | 17 | ns | ||
2201210930_Slkor-2N7002KT_C2965535.pdf
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