N Channel MOSFET Siliup SP010N90T8 with 100V Drain Source Voltage and 5A Continuous Drain Current
Key Attributes
Model Number:
SP010N90T8
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
5A
RDS(on):
90mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
30pF
Number:
1 N-channel
Output Capacitance(Coss):
38pF
Input Capacitance(Ciss):
790pF
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
16nC@10V
Mfr. Part #:
SP010N90T8
Package:
SOT-89-3L
Product Description
Product Overview
The SP010N90T8 is a 100V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capabilities in a surface mount SOT-89 package. This MOSFET is suitable for applications such as battery switches and DC/DC converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: N-Channel MOSFET
- Package: SOT-89
- Marking: 1005
Technical Specifications
| Parameter | Symbol | Conditions | Value | Unit | ||
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 100 | V | |||
| RDS(on) Typ. (@10V) | RDS(on)TYP | 90 | m | |||
| ID (@10V) | ID | 5 | A | |||
| RDS(on) Typ. (@4.5V) | RDS(on)TYP | 100 | m | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 100 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | 5 | A | |||
| Pulse Drain Current | IDM | Tested | 20 | A | ||
| Power Dissipation | PD | 1.5 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 83 | C/W | |||
| Storage Temperature Range | TSTG | -55 to 150 | C | |||
| Operating Junction Temperature Range | TJ | -55 to 150 | C | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 100 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=80V , VGS=0V | - | 1 | uA | |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | 100 | nA | |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=5A | - | 90 | 130 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=3A | - | 100 | 140 | m |
| Input Capacitance | Ciss | VDS=50V , VGS=0V , f=1MHz | - | 790 | - | pF |
| Output Capacitance | Coss | - | 38 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 30 | - | pF | |
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=3A | - | 16 | - | nC |
| Gate-Source Charge | Qgs | - | 2.5 | - | ||
| Gate-Drain Charge | Qg | - | 2.6 | - | ||
| Turn-On Delay Time | td(on) | VDD=50V VGS=10V , RG=3, ID=5A | - | 5 | - | nS |
| Turn-On Rise Time | tr | - | 40 | - | ||
| Turn-Off Delay Time | td(off) | - | 20 | - | ||
| Turn-Off Fall Time | tf | - | 7 | - | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| SOT-89 Package Outline Dimensions | ||||||
| Symbol | Dimensions (mm) | Min. | Max. | |||
| A | 1.400 | 1.600 | ||||
| b | 0.320 | 0.520 | ||||
| b1 | 0.400 | 0.580 | ||||
| c | 0.350 | 0.440 | ||||
| D | 4.400 | 4.600 | ||||
| D1 | 1.550 | REF. | ||||
| D2 | 1.750 | REF. | ||||
| E | 2.300 | 2.600 | ||||
| E1 | 3.940 | 4.250 | ||||
| E2 | 1.900 | REF. | ||||
| e | 1.500 | TYP. | ||||
| e1 | 3.000 | TYP. | ||||
| L | 0.900 | 1.200 | ||||
| 45 | ||||||
2504101957_Siliup-SP010N90T8_C41354893.pdf
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