Low RDSon P Channel MOSFET Slkor SL3139KW Designed for Portable Electronics and Battery Circuits
Key Attributes
Model Number:
SL3139KW
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
660mA
RDS(on):
380mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
650mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
8.8pF
Output Capacitance(Coss):
15pF
Input Capacitance(Ciss):
115pF
Gate Charge(Qg):
1.25nC@4.5V
Mfr. Part #:
SL3139KW
Package:
SOT-323
Product Description
Product Overview
The SL3139KW is a P-Channel MOSFET designed for surface mount applications. It features low RDS(on) and is suitable for low logic level gate drive, making it ideal for load/power switching, interfacing, logic switching, and battery management in ultra-small portable electronics. This lead-free product offers efficient switching performance.
Product Attributes
- Lead Free Product is Acquired
- Surface Mount Package
- P-Channel Switch with Low RDS(on)
- Operated at Low Logic Level Gate Drive
Technical Specifications
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -20 | V | |||
| VGS | Gate-Source Voltage | ±10 | V | |||
| TJ | Maximum Junction Temperature | 150 | ±C | |||
| TSTG | Storage Temperature Range | -55 | 150 | ±C | ||
| IS | Diode Continuous Forward Current | Tc=25±C | -0.66 | A | ||
| IDM | Pulse Drain Current | Tc=25±C | -1.2 | A | ||
| ID | Tested Continuous Drain Current | Tc=25±C | -0.66 | A | ||
| PD | Maximum Power Dissipation | Tc=25±C | 0.2 | W | ||
| RθJA | Thermal Resistance Junction-to-Ambient | Mounted on Large Heat Sink | 625 | ±C/W | ||
| Static Electrical Characteristics @ TJ = 25±C (unless otherwise noted) | ||||||
| BV(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID=-250μA | -20 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=-20V, VGS=0V | -1 | uA | ||
| IGSS | Gate-Body Leakage Current | VGS=±10V, VDS=0V | ±10 | uA | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=-250μA | -0.35 | -0.65 | -1.1 | V |
| RDS(on) | Drain-Source On-State Resistance | VGS=-4.5V, ID=-1.0A | 380 | 520 | mΩ | |
| VGS=-2.5V, ID=-0.8A | 520 | 700 | mΩ | |||
| VGS=-1.8V, ID=-0.5A | 750 | mΩ | ||||
| Dynamic Electrical Characteristics @ TJ = 25±C (unless otherwise stated) | ||||||
| CISS | Input Capacitance | VDS=-10V, VGS=0V, f=1MHz | 115 | pF | ||
| COSS | Output Capacitance | VDS=-10V, VGS=0V, f=1MHz | 15 | pF | ||
| CRSS | Reverse Transfer Capacitance | VDS=-10V, VGS=0V, f=1MHz | 8.8 | pF | ||
| Qg | Total Gate Charge | VDD=-10V, ID=-0.5A, VGS=-4.5V | 1.25 | nC | ||
| Qgs | Gate Source Charge | VDD=-10V, ID=-0.5A, VGS=-4.5V | 0.35 | nC | ||
| Qgd | Gate Drain Charge | VDD=-10V, ID=-0.5A, VGS=-4.5V | 0.29 | nC | ||
| td(on) | Turn-on Delay Time | VDS=-10V, ID=-0.2A, VGS=-4.5V, RG=10Ω | 9 | nS | ||
| tr | Turn-on Rise Time | VDS=-10V, ID=-0.2A, VGS=-4.5V, RG=10Ω | 5.5 | nS | ||
| td(off) | Turn-Off Delay Time | VDS=-10V, ID=-0.2A, VGS=-4.5V, RG=10Ω | 30.8 | nS | ||
| tf | Turn-Off Fall Time | VDS=-10V, ID=-0.2A, VGS=-4.5V, RG=10Ω | 20 | nS | ||
| Source- Drain Diode Characteristics | ||||||
| VSD | Forward on voltage | Tj=25±C, Is=-0.66A | -1.2 | V | ||
2412171034_Slkor-SL3139KW_C42415165.pdf
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