85V N Channel Power MOSFET Siliup SP85N05AGHTD Featuring Low RDS on and High Avalanche Energy Reliability

Name: 85V N Channel Power MOSFET Siliup SP85N05AGHTD Featuring Low RDS on and High Avalanche Energy Reliability
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: SP85N05AGHTD
Availability: InStock

Key Attributes

Model Number: SP85N05AGHTD

Product Custom Attributes

Drain To Source Voltage:

85V

Current - Continuous Drain(Id):

110A

RDS(on):

4.5mΩ@10V

Operating Temperature -:

-55℃~+150℃

Gate Threshold Voltage (Vgs(th)):

3V@250uA

Reverse Transfer Capacitance (Crss@Vds):

23pF

Number:

1 N-channel

Output Capacitance(Coss):

1.058nF

Input Capacitance(Ciss):

3.543nF

Pd - Power Dissipation:

170W

Gate Charge(Qg):

49nC@10V

Mfr. Part #:

SP85N05AGHTD

Package:

TO-263-3L

Product Description

Product Overview

The SP85N05AGHTD is an 85V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed with advanced split gate trench technology, it offers fast switching, low gate charge, and low RDS(on). This MOSFET is ideal for power switching applications, DC-DC converters, and power management systems. It features 100% single pulse avalanche energy testing for enhanced reliability.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Device Code: 85N05AGH

Technical Specifications

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Product Summary
V(BR)DSS	V(BR)DSS			85		V
RDS(on)TYP	RDS(on)	@10V		4.5		m
ID	ID			110		A
Absolute Maximum Ratings
Drain-Source Voltage	VDS	(Ta=25 unless otherwise noted)			85	V
Gate-Source Voltage	VGS			20		V
Continuous Drain Current (Tc=25)	ID				110	A
Continuous Drain Current (Tc=100)	ID				75	A
Pulsed Drain Current	IDM				440	A
Single Pulse Avalanche Energy	EAS				784	mJ
Power Dissipation (Tc=25)	PD				170	W
Thermal Resistance Junction-to-Case	RJC				0.74	/W
Storage Temperature Range	TSTG		-55		150
Operating Junction Temperature Range	TJ		-55		150
Electrical Characteristics
Drain-Source Breakdown Voltage	BVDSS	ID = 250A, VGS = 0V	85	90	-	V
Drain Cut-Off Current	IDSS	VDS = 68V, VGS = 0V	-	-	1	A
Gate Leakage Current	IGSS	VGS = 20V, VDS = 0V	-	-	0.1	A
Gate Threshold Voltage	VGS(th)	VDS = VGS, ID = 250A	2	3	4	V
Drain-Source ON Resistance	RDS(ON)	VGS = 10V, ID = 20A	-	4.5	5.7	m
Dynamic Characteristics
Input Capacitance	Ciss	VDS =40V, VGS = 0V, f = 1.0MHz	-	3543	-	pF
Output Capacitance	Coss		-	1058	-	pF
Reverse Transfer Capacitance	Crss		-	23	-	pF
Total Gate Charge	Qg	VDS=40V , VGS=10V , ID=165A	-	49	-	nC
Gate-Source Charge	Qgs		-	16	-	nC
Gate-Drain Charge	Qgd		-	13	-	nC
Switching Characteristics
Turn-On Delay Time	td(on)	VGS = 10V, VDS = 40V, ID=165A , RG = 1.6	-	17	-	nS
Rise Time	tr		-	25	-	nS
Turn-Off Delay Time	td(off)		-	36	-	nS
Fall Time	tf		-	15	-	nS
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage	VSD	IS = 1A, VGS = 0V	-	-	1.2	V
Maximum Body-Diode Continuous Current	IS		-	-	110	A
Reverse Recovery Time	Trr	IS=20A, di/dt=100A/us, TJ=25	-	62	-	nS
Reverse Recovery Charge	Qrr		-	103	-	nC

Note: 1. The test condition is VDD=45V,VGS=10V,L=0.5mH,RG=25

Package Information

Package: TO-263

Pin Configuration: 1:G 2:D 3:S

Symbol	Dimensions In Millimeters (Min.)	Dimensions In Millimeters (Max.)	Dimensions In Inches (Min.)	Dimensions In Inches (Max.)
A	4.470	4.670	0.176	0.184
A1	0.000	0.150	0.000	0.006
B	1.120	1.420	0.044	0.056
b	0.710	0.910	0.028	0.036
b1	1.170	1.370	0.046	0.054
c	0.310	0.530	0.012	0.021
c1	1.170	1.370	0.046	0.054
D	10.010	10.310	0.394	0.406
E	8.500	8.900	0.335	0.350
e	2.540 TYP.		0.100 TYP.
e1	4.980	5.180	0.196	0.204
L	14.940	15.500	0.588	0.610
L1	4.950	5.450	0.195	0.215
L2	2.340	2.740	0.092	0.108
L3	1.300	1.700	0.051	0.067
	0	8	0	8
V	5.600 REF.		0.220 REF.

Order Information

Device	Package	Unit/Tape
SP85N05AGHTD	TO-263	800

2504101957_Siliup-SP85N05AGHTD_C22466823.pdf

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