40V 8A Dual N Channel MOSFET SLKOR SL4882A Featuring High Speed Switching for Power Management Applications

Key Attributes
Model Number: SL4882A
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
8A
RDS(on):
20mΩ@10V,8A
Gate Threshold Voltage (Vgs(th)):
2.5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
13pF
Number:
2 N-Channel
Input Capacitance(Ciss):
421pF
Output Capacitance(Coss):
115pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
6.8nC@10V
Mfr. Part #:
SL4882A
Package:
SOP-8
Product Description

Product Overview

The SL4882A is a 40V/8A Dual N-Channel MOSFET featuring Trench Power LV MOSFET technology for high density cell design, resulting in low RDS(ON) and high-speed switching. It is ideal for applications such as battery protection, load switches, and power management.

Product Attributes

  • Brand: SLKORMicro
  • Origin: Not Specified
  • Material: Not Specified
  • Color: Not Specified
  • Certifications: Not Specified

Technical Specifications

ParameterSymbolConditionMinTypMaxUnit
Static Electrical CharacteristicsBV(BR)DSSVGS=0VID=250A40----V
IDSSVDS=40VVGS=0V----1uA
IGSSVGS=20VVDS=0V----100nA
Gate Threshold VoltageVGS(th)VDS=VGSID=250A11.52.5V
RDS(on)VGS=10V ID=8A--1520m
VGS=4.5VID=4A--2435m
CapacitanceCISSVDS=20VVGS=0V f=1MHz--421--pF
COSS--115--pF
CRSS--13--pF
Dynamic Electrical CharacteristicsQg--6.8--nC
Qgs--1.1--nC
Qgd--1.3--nC
Switching Characteristicstd(on)VDS=20VRL=2.5 VGS=10VRG=3--3.8--nS
tr--2.5--nS
td(off)--14.4--nS
tf--2--nS
Source-Drain Diode CharacteristicsVSDTj=25Is=3A----1.2V
Absolute Maximum RatingsVDS----40V
VGS----20V
TJ----150C
TSTG-55--150C
ISTc=25C----8A
IDMTc=25C----38A
IDTc=25C----8A
PDTc=25C------W
Thermal ResistanceRJA((*1 in2 Pad of 2-oz Copper), Max.)--60--C/W

2409302203_Slkor-SL4882A_C19188369.pdf

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