High Frequency Switching Performance Siliup SPZ44TH 60V N-Channel Planar MOSFET with Low Gate Charge

Key Attributes
Model Number: SPZ44TH
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
45A
RDS(on):
17mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
90pF
Number:
1 N-channel
Pd - Power Dissipation:
90W
Output Capacitance(Coss):
354pF
Input Capacitance(Ciss):
1.476nF
Gate Charge(Qg):
36nC@10V
Mfr. Part #:
SPZ44TH
Package:
TO-252
Product Description

Product Overview

The SPZ44TH is a 60V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for efficient power management. It features fast switching, low gate charge, and low RDS(on), making it ideal for high-frequency switching applications and synchronous rectification. The device is 100% tested for single pulse avalanche energy and is suitable for DC-DC converters.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Line: SPZ44TH
  • Channel Type: N-Channel
  • Technology: Planar MOSFET
  • Package: TO-252
  • Device Code: Z44

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
V(BR)DSS 60 V
RDS(on) @10V 17 m
ID 45 A
Absolute Maximum Ratings
Drain-Source Voltage VDS (Ta=25) 60 V
Gate-Source Voltage VGS (Ta=25) 25 V
Continuous Drain Current ID (TC=25) 45 A
Continuous Drain Current ID (TC=100) 30 A
Pulsed Drain Current IDM 180 A
Single Pulse Avalanche Energy EAS 1280 mJ
Power Dissipation PD (TC=25) 90 W
Thermal Resistance Junction-to-Case RJC 1.35 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 60 - - V
Drain-Source Leakage Current IDSS VDS=48V , VGS=0V , TJ=25 - - 25 uA
Gate-Source Leakage Current IGSS VGS=25V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 2 3 4 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V , ID=16A - 17 22 m
Input Capacitance Ciss VDS=25V , VGS=0V , f=1MHz - 1476 - pF
Output Capacitance Coss VDS=25V , VGS=0V , f=1MHz - 354 - pF
Reverse Transfer Capacitance Crss VDS=25V , VGS=0V , f=1MHz - 90 - pF
Total Gate Charge Qg VDS=44V , VGS=10V , ID=25A - 36 - nC
Gate-Source Charge Qgs VDS=44V , VGS=10V , ID=25A - 5 - nC
Gate-Drain Charge Qgd VDS=44V , VGS=10V , ID=25A - 9 - nC
Turn-On Delay Time td(on) VDD=28V VGS=10V , RG=12, ID=25A - 12 - nS
Rise Time tr VDD=28V VGS=10V , RG=12, ID=25A - 60 - nS
Turn-Off Delay Time td(off) VDD=28V VGS=10V , RG=12, ID=25A - 44 - nS
Fall Time tf VDD=28V VGS=10V , RG=12, ID=25A - 45 - nS
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 45 A
Reverse Recovery Time trr IS=25A, di/dt=100A/us, TJ=25 - 65 - nS
Reverse Recovery Charge Qrr IS=25A, di/dt=100A/us, TJ=25 - 175 - nC
Package Information (TO-252)
Parameter Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max.
A 2.200 2.400 0.087 0.094
A1 0.000 0.127 0.000 0.005
b 0.660 0.860 0.026 0.034
c 0.460 0.580 0.018 0.023
D 6.500 6.700 0.256 0.264
D1 5.100 5.460 0.201 0.215
D2 4.830 REF. 0.190 REF.
E 6.000 6.200 0.236 0.244
e 2.186 2.386 0.086 0.094
L 9.800 10.400 0.386 0.409
L1 2.900 REF. 0.114 REF.
L2 1.400 1.700 0.055 0.067
L3 1.600 REF. 0.063 REF.
L4 0.600 1.000 0.024 0.039
1.100 1.300 0.043 0.051
0 8 0 8
h 0.000 0.300 0.000 0.012
V 5.350 REF. 0.211 REF.

2506271732_Siliup-SPZ44TH_C49257254.pdf
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