High Frequency Switching Performance Siliup SPZ44TH 60V N-Channel Planar MOSFET with Low Gate Charge
Product Overview
The SPZ44TH is a 60V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for efficient power management. It features fast switching, low gate charge, and low RDS(on), making it ideal for high-frequency switching applications and synchronous rectification. The device is 100% tested for single pulse avalanche energy and is suitable for DC-DC converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: SPZ44TH
- Channel Type: N-Channel
- Technology: Planar MOSFET
- Package: TO-252
- Device Code: Z44
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 60 | V | ||||
| RDS(on) | @10V | 17 | m | |||
| ID | 45 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25) | 60 | V | ||
| Gate-Source Voltage | VGS | (Ta=25) | 25 | V | ||
| Continuous Drain Current | ID | (TC=25) | 45 | A | ||
| Continuous Drain Current | ID | (TC=100) | 30 | A | ||
| Pulsed Drain Current | IDM | 180 | A | |||
| Single Pulse Avalanche Energy | EAS | 1280 | mJ | |||
| Power Dissipation | PD | (TC=25) | 90 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 1.35 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 60 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=48V , VGS=0V , TJ=25 | - | - | 25 | uA |
| Gate-Source Leakage Current | IGSS | VGS=25V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 2 | 3 | 4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=16A | - | 17 | 22 | m |
| Input Capacitance | Ciss | VDS=25V , VGS=0V , f=1MHz | - | 1476 | - | pF |
| Output Capacitance | Coss | VDS=25V , VGS=0V , f=1MHz | - | 354 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V , VGS=0V , f=1MHz | - | 90 | - | pF |
| Total Gate Charge | Qg | VDS=44V , VGS=10V , ID=25A | - | 36 | - | nC |
| Gate-Source Charge | Qgs | VDS=44V , VGS=10V , ID=25A | - | 5 | - | nC |
| Gate-Drain Charge | Qgd | VDS=44V , VGS=10V , ID=25A | - | 9 | - | nC |
| Turn-On Delay Time | td(on) | VDD=28V VGS=10V , RG=12, ID=25A | - | 12 | - | nS |
| Rise Time | tr | VDD=28V VGS=10V , RG=12, ID=25A | - | 60 | - | nS |
| Turn-Off Delay Time | td(off) | VDD=28V VGS=10V , RG=12, ID=25A | - | 44 | - | nS |
| Fall Time | tf | VDD=28V VGS=10V , RG=12, ID=25A | - | 45 | - | nS |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 45 | A | |
| Reverse Recovery Time | trr | IS=25A, di/dt=100A/us, TJ=25 | - | 65 | - | nS |
| Reverse Recovery Charge | Qrr | IS=25A, di/dt=100A/us, TJ=25 | - | 175 | - | nC |
| Package Information (TO-252) | ||||||
| Parameter | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 2.200 | 2.400 | 0.087 | 0.094 | ||
| A1 | 0.000 | 0.127 | 0.000 | 0.005 | ||
| b | 0.660 | 0.860 | 0.026 | 0.034 | ||
| c | 0.460 | 0.580 | 0.018 | 0.023 | ||
| D | 6.500 | 6.700 | 0.256 | 0.264 | ||
| D1 | 5.100 | 5.460 | 0.201 | 0.215 | ||
| D2 | 4.830 REF. | 0.190 REF. | ||||
| E | 6.000 | 6.200 | 0.236 | 0.244 | ||
| e | 2.186 | 2.386 | 0.086 | 0.094 | ||
| L | 9.800 | 10.400 | 0.386 | 0.409 | ||
| L1 | 2.900 REF. | 0.114 REF. | ||||
| L2 | 1.400 | 1.700 | 0.055 | 0.067 | ||
| L3 | 1.600 REF. | 0.063 REF. | ||||
| L4 | 0.600 | 1.000 | 0.024 | 0.039 | ||
| 1.100 | 1.300 | 0.043 | 0.051 | |||
| 0 | 8 | 0 | 8 | |||
| h | 0.000 | 0.300 | 0.000 | 0.012 | ||
| V | 5.350 REF. | 0.211 REF. | ||||
2506271732_Siliup-SPZ44TH_C49257254.pdf
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