N Channel Power MOSFET Siliup SP60N08GNJ 60V Rated Device with Fast Switching and Low On Resistance
Key Attributes
Model Number:
SP60N08GNJ
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
40A
Operating Temperature -:
-55℃~+150℃
RDS(on):
7.5mΩ@10V;10mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
25pF
Number:
1 N-channel
Output Capacitance(Coss):
310pF
Input Capacitance(Ciss):
1.35nF
Pd - Power Dissipation:
40W
Gate Charge(Qg):
27.9nC@10V
Mfr. Part #:
SP60N08GNJ
Package:
PDFN-8L(3x3)
Product Description
Product Overview
The SP60N08GNJ is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications. It features fast switching, low gate charge, and low RDS(on) due to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for hard switched and high frequency circuits, as well as uninterruptible power supplies. It comes in a PDFN3X3-8L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: N-Channel Power MOSFET
- Technology: Advanced Split Gate Trench Technology
- Package: PDFN3X3-8L
- Device Code: SP60N08GNJ
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | 60 | V | |||
| RDS(on) | RDS(on)TYP | @10V | 7.5 | m | ||
| RDS(on) | RDS(on)TYP | @4.5V | 10 | m | ||
| ID | ID | 40 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | (Ta=25, unless otherwise noted) | 60 | V | ||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | (Tc=25C) | 40 | A | ||
| Continuous Drain Current | ID | (Tc=100C) | 30 | A | ||
| Pulse Drain Current | IDM | Tested | 160 | A | ||
| Single Pulse Avalanche Energy | EAS | 90 | mJ | |||
| Power Dissipation | PD | (Tc=25C) | 40 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 3.13 | C/W | |||
| Maximum Junction Temperature | TJ | -55 | 150 | C | ||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250mA | 60 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=48V, VGS=0V | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 1 | 1.5 | 2.5 | V |
| Drain-Source On-state Resistance | RDS(ON) | VGS=10V, ID=20A | - | 7.5 | 10 | m |
| Drain-Source On-state Resistance | RDS(ON) | VGS=4.5V, ID=10A | - | 10 | 13 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VGS=0V, VDS=30V, F=1MHz | - | 1350 | - | pF |
| Output Capacitance | Coss | - | 310 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 25 | - | pF | |
| Total Gate Charge | Qg | VDS=30V, VGS=10V, ID=20A | - | 27.9 | - | nC |
| Gate-Source Charge | Qgs | - | 7.8 | - | nC | |
| Gate-Drain Charge | Qgd | - | 6.2 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=30V, ID=20A, VGS=10V, RG=4.7 | - | 14 | - | nS |
| Rise Time | tr | - | 26 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 33.8 | - | nS | |
| Fall Time | tf | - | 26.4 | - | nS | |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | VGS=0V, IS=1A, TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 40 | A | |
| Reverse Recovery Time | trr | IS=30 A, di/dt=100 A/s, TJ=25 | - | 36 | - | nS |
| Reverse Recovery Charge | Qrr | - | 23 | - | nC | |
| Package Information (PDFN3X3-8L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.650 | 0.850 | 0.026 | 0.033 | ||
| A1 | 0.152 REF. | 0.006 REF. | ||||
| A2 | 0~0.05 | 0~0.002 | ||||
| D | 2.900 | 3.100 | 0.114 | 0.122 | ||
| D1 | 2.300 | 2.600 | 0.091 | 0.102 | ||
| E | 2.900 | 3.100 | 0.114 | 0.122 | ||
| E1 | 3.150 | 3.450 | 0.124 | 0.136 | ||
| E2 | 1.535 | 1.935 | 0.060 | 0.076 | ||
| b | 0.200 | 0.400 | 0.008 | 0.016 | ||
| e | 0.550 | 0.750 | 0.022 | 0.030 | ||
| L | 0.300 | 0.500 | 0.012 | 0.020 | ||
| L1 | 0.180 | 0.480 | 0.007 | 0.019 | ||
| L2 | 0~0.100 | 0~0.004 | ||||
| L3 | 0~0.100 | 0~0.004 | ||||
| H | 0.315 | 0.515 | 0.012 | 0.020 | ||
| 9 | 13 | 9 | 13 | |||
2504101957_Siliup-SP60N08GNJ_C22466774.pdf
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