power transistor Slkor SL90P03G with 30 volt drain source voltage and robust avalanche pulse protection
Key Attributes
Model Number:
SL90P03G
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
90A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.5mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
1.1V
Reverse Transfer Capacitance (Crss@Vds):
212pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
1.859nF@15V
Pd - Power Dissipation:
31W
Gate Charge(Qg):
48nC@10V
Mfr. Part #:
SL90P03G
Package:
PDFN3x3-8L
Product Description
Product Overview
This Power MOSFET utilizes advanced TRENCH technology, engineered to minimize conduction losses, deliver superior switching performance, and provide robust protection against high energy pulses in avalanche and commutation modes. Its design is optimized for efficiency and reliability in demanding applications.
Product Attributes
- Brand: SLKORMicro
- Model: SL90P03G
- Package: PDFN3*3-8L
- Technology: TRENCH
- Testing: 100% avalanche tested
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
| Drain-source Voltage | VDS | 30 | V | |
| Gate-source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | ID | 90 | A | TC=25°C |
| Continuous Drain Current | ID | 48 | A | TC=100°C |
| Maximum Power Dissipation | PD | 31 | W | TC=25°C |
| Avalanche energy, single Pulse | EAS | 39 | mJ | L=0.5mH (note2) |
| Operating Junction And Storage Temperature | Tj,Tstg | -55 To 150 | °C | |
| Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds | TL | 300 | °C | |
| Junction-to-Case Thermal Resistance | RθJC | 4 | °C/W | Max |
| Drain-source breakdown voltage | BVDSS | 30 | V | VGS=0V, ID= 250µA |
| Zero gate voltage drain current | IDSS | 1 | µA | VDS= 24V, VGS=0V |
| Gate-source leakage current | IGSS | ±10 | uA | VGS=±20V, VDS=0V |
| Gate threshold voltage | VGS(th) | 1.1 - 2.1 | V | VDS=VGS, ID= 250µA (Min. Typ. Max.) |
| Drain-source on-state resistance | RDS(on) | 3.6 | mΩ | VGS= 10V, ID= 20A (Typ.) |
| Drain-source on-state resistance | RDS(on) | 5.3 | mΩ | VGS= 4.5V, ID= 18A (Typ.) |
| Input Capacitance | Ciss | 1859 | PF | VGS=0V, VDS= 15V, f=1.0MHz (Typ.) |
| Output Capacitance | Coss | 260 | PF | VGS=0V, VDS= 15V, f=1.0MHz (Typ.) |
| Reverse Transfer Capacitance | Crss | 212 | PF | VGS=0V, VDS= 15V, f=1.0MHz (Typ.) |
| Turn-on delay time | td(on) | 9.6 | nS | VDS=15V, VGS= 10V, RG= 3.9Ω, ID= 15A, RL=1Ω (Typ.) |
| Turn-on Rise time | tr | 23.4 | nS | VDS=15V, VGS= 10V, RG= 3.9Ω, ID= 15A, RL=1Ω (Typ.) |
| Turn-off delay time | td(off) | 62.8 | nS | VDS=15V, VGS= 10V, RG= 3.9Ω, ID= 15A, RL=1Ω (Typ.) |
| Turn-off Fall time | tf | 23 | nS | VDS=15V, VGS= 10V, RG= 3.9Ω, ID= 15A, RL=1Ω (Typ.) |
| Gate Total Charge | QG | 48 | nC | VGS= 10V, VDS= 25V, ID= 14A (Typ.) |
| Gate-Source Charge | QgS | 3.4 | nC | VGS= 10V, VDS= 25V, ID= 14A (Typ.) |
| Gate-Drain Charge | Qgd | 14 | nC | VGS= 10V, VDS= 25V, ID= 14A (Typ.) |
| Body Diode Forward Voltage | VSD | 0.75 - 1.1 | V | VGS=0V, ISD= 1A, T J = 25°C (Typ. Max.) |
| Body Diode Reverse Recovery Time | Trr | 18.2 | ns | TJ=25°C, IF= 2A, VGS=0V, di/dt =100A/µs (Typ.) |
| Body Diode Reverse Recovery Charge | Qrr | 9.2 | nC | TJ=25°C, IF= 2A, VGS=0V, di/dt =100A/µs (Typ.) |
Applications
- Portable Equipment and Battery Powered systems
- Power Management in Notebook Computer
2511281715_Slkor-SL90P03G_C6800601.pdf
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