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quality 20V Dual N Channel MOSFET Siliup SP8205DS8 High Current 5A Surface Mount Package for Power Switching factory
quality 20V Dual N Channel MOSFET Siliup SP8205DS8 High Current 5A Surface Mount Package for Power Switching factory

20V Dual N Channel MOSFET Siliup SP8205DS8 High Current 5A Surface Mount Package for Power Switching

Key Attributes
Model Number: SP8205DS8
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
5A
RDS(on):
20mΩ@4.5V;26mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
660mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
70pF
Number:
2 N-Channel
Output Capacitance(Coss):
87pF
Pd - Power Dissipation:
1.5W
Input Capacitance(Ciss):
415pF
Gate Charge(Qg):
6.5nC@4.5V
Mfr. Part #:
SP8205DS8
Package:
TSSOP-8L
Product Description

Product Overview

The SP8205DS8 is a 20V Dual N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capability in a surface mount package. This MOSFET is designed for applications such as battery switches and DC/DC converters.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Model: SP8205DS8
  • Device Code: 8205

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
V(BR)DSS 20 V
RDS(on)TYP @4.5V 20 m
RDS(on)TYP @2.5V 26 m
ID 5 A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage VDSS 20 V
Gate-Source Voltage VGSS 12 V
Continuous Drain Current ID 5 A
Pulse Drain Current IDM Tested 20 A
Power Dissipation PD 1.5 W
Thermal Resistance Junction-to-Ambient RJA 83.3 C/W
Storage Temperature Range TSTG -55 150 C
Operating Junction Temperature Range TJ -55 150 C
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250A 20 - - V
Drain-Source Leakage Current IDSS VDS=16V , VGS=0V - - 1 uA
Gate-Source Leakage Current IGSS VGS=12V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS , ID=250A 0.5 0.66 1.2 V
Static Drain-Source On-Resistance RDS(ON) VGS=4.5V , ID =4.5A - 20 27 m
Static Drain-Source On-Resistance RDS(ON) VGS=2.5V , ID =3.5A - 26 32 m
Input Capacitance Ciss VDS=10V , VGS=0V , f=1MHz - 415 - pF
Output Capacitance Coss - 87 -
Reverse Transfer Capacitance Crss - 70 -
Total Gate Charge Qg VDS=10V , VGS=4.5V , ID=4A - 6.5 - nC
Gate-Source Charge Qgs - 1.2 -
Gate-Drain Charge Qg d - 1.5 -
Turn-On Delay Time td(on) VDD=10V , VGS=4.5V , RG=3 , ID=1A - 4.5 - nS
Turn-On Rise Time tr - 80 -
Turn-Off Delay Time td(off) - 25 -
Turn-Off Fall Time tf - 23 -
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Package Information (TSSOP-8L)
Symbol Dimensions (mm) Min Max
D 2.900 3.100
E 4.300 4.500
b 0.190 0.300
c 0.090 0.200
E1 6.250 6.550
A 1.200
A2 0.800 1.000
A1 0.050 0.150
e 0.65(BSC)
L 0.500 0.700
H 0.25(TYP)
1 7

2504101957_Siliup-SP8205DS8_C41354829.pdf

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