power management solution Slkor WPM2341 P channel enhancement mode power MOSFET for PWM applications
Key Attributes
Model Number:
WPM2341
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
50mΩ@4.5V,3A
Gate Threshold Voltage (Vgs(th)):
400mV
Reverse Transfer Capacitance (Crss@Vds):
89pF@10V
Number:
1 P-Channel
Input Capacitance(Ciss):
405pF@10V
Pd - Power Dissipation:
1W
Gate Charge(Qg):
9nC@10V
Mfr. Part #:
WPM2341
Package:
SOT-23
Product Description
Product Overview
P-channel Enhancement Mode Power MOSFET designed for PWM applications, load switching, and power management. This device offers efficient power handling and is suitable for various power management scenarios.
Product Attributes
- Brand: WPM2341
- Manufacturer: SLKORMicro
Technical Specifications
| Parameter | Symbol | Test conditions | MIN | TYP | MAX | UNIT |
| MAXIMUM RATINGS | ||||||
| Drain-Source voltage | VDS | -20 | V | |||
| Gate-Source voltage | VGS | 12 | V | |||
| Drain current | ID | -3 | A | |||
| Power Dissipation | PD | (TA=25unless otherwise noted) | 1 | W | ||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | 150 | |||
| ELECTRICAL CHARACTERISTICS | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=-250uA | -20 | V | ||
| Gate-Threshold Voltage | Vth(GS) | VDS= VGS, ID=-250 uA | -0.4 | -0.65 | -1 | V |
| Gate-body Leakage | IGSS | VDS=0V, VGS=12V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-19V, VGS=0V | -1 | uA | ||
| Drain-Source On-Resistance | rDS(ON) | VGS=-4.5V, ID=-3.0A | 50 | 70 | m | |
| Drain-Source On-Resistance | rDS(ON) | VGS=-2.5V, ID=-2.0A | 70 | 90 | m | |
| Forward Trans conductance | gfs | VDS=-5V, ID=-1.0A | 6 | s | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-10V, VGS=0V, f=1MHz | 405 | pF | ||
| Output Capacitance | Coss | 112 | pF | |||
| Reverse Transfer Capacitance | Crss | 89 | pF | |||
| Switching Capacitance | ||||||
| Turn-on Delay Time | td(on) | VDD=-10V, RL=2.9 , VGS=-4.5V RGEN=10 | 11 | nS | ||
| Turn-on Rise Time | tr | 35 | nS | |||
| Turn-off Delay Time | td(off) | 30 | nS | |||
| Turn-off Fall Time | tf | 10 | nS | |||
| Total Gate Charge | Qg | VDS=-10V, ID=-2.5A, VGS=-4.5V | 9.0 | nC | ||
| Gate-Source Charge | Qgs | 1.0 | nC | |||
| Gate-Drain Charge | Qg d | 2.5 | nC | |||
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V, ID=-3A | -1.2 | V | ||
| Diode Forward Current | Is | -3.0 | A | |||
2409302302_Slkor-WPM2341_C5223664.pdf
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