P Channel Enhancement Mode MOSFET Slkor SL3405 Engineered for Electronic Switching and Amplification

Key Attributes
Model Number: SL3405
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
2.6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
180mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.3V@250uA
Type:
P-Channel
Number:
1 P-Channel
Input Capacitance(Ciss):
854pF@15V
Pd - Power Dissipation:
1W
Mfr. Part #:
SL3405
Package:
SOT-23
Product Description

SL3405 P-Channel Enhancement-Mode MOSFET

The SL3405 is a P-channel enhancement-mode MOSFET designed for various electronic applications. Its robust ratings and electrical characteristics make it suitable for general-purpose switching and amplification tasks.

Product Attributes

  • Brand: SLKOR Micro
  • Model: SL3405
  • Package: SOT-23
  • Channel Type: P-Channel Enhancement-Mode
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

Characteristic Symbol Min Typ Max Unit Conditions
Drain-Source Breakdown Voltage BVDSS -30 - - V ID = -250uA, VGS=0V
Gate Threshold Voltage VGS(th) -1.3 - -2.3 V ID = -250uA, VGS= VDS
Diode Forward Voltage Drop VSD - - -1 V IS = -1A, VGS=0V
Zero Gate Voltage Drain Current IDSS - - -1 uA VGS=0V, VDS= -24V (TA=25)
Zero Gate Voltage Drain Current IDSS - - -5 uA VGS=0V, VDS= -24V (TA=55)
Gate Body Leakage IGSS - - +100 nA VGS=+12V, VDS=0V
Static Drain-Source On-State Resistance RDS(ON) - - 130 m ID= -2.6A, VGS= -10V
Static Drain-Source On-State Resistance RDS(ON) - - 180 m ID= -2A, VGS= -4.5V
Input Capacitance CISS - 854 - pF VGS=0V, VDS= -15V, f=1MHz
Output Capacitance COSS - 105 - pF VGS=0V, VDS= -15V, f=1MHz
Turn-ON Time t(on) - 9 - ns VDS= -15V, VGS= -10V, RGEN=6
Turn-OFF Time t(off) - 38 - ns VDS= -15V, VGS= -10V, RGEN=6

Maximum Ratings

Characteristic Symbol Max Unit Conditions
Drain-Source Voltage BVDSS -30 V
Gate-Source Voltage VGS +12 V
Drain Current (continuous) ID -2.6 A
Drain Current (pulsed) IDM -18 A Pulse Width<300s; Duty Cycle<2.0%
Total Device Dissipation PD 1000 mW TA=25
Junction Temperature TJ 150
Storage Temperature Tstg -55to+150

2111122130_Slkor-SL3405_C2918941.pdf

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