86--136 6733 2386
quality Power MOSFET Siliup SP60P90T8 60V P Channel with Continuous Drain Current and Surface Mount Package factory
quality Power MOSFET Siliup SP60P90T8 60V P Channel with Continuous Drain Current and Surface Mount Package factory

Power MOSFET Siliup SP60P90T8 60V P Channel with Continuous Drain Current and Surface Mount Package

Key Attributes
Model Number: SP60P90T8
Product Custom Attributes
Pd - Power Dissipation:
1W
Drain To Source Voltage:
60V
Configuration:
-
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
90mΩ@10V;110mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
38pF
Number:
1 P-Channel
Output Capacitance(Coss):
87pF
Input Capacitance(Ciss):
960pF
Gate Charge(Qg):
15.7nC@10V
Mfr. Part #:
SP60P90T8
Package:
SOT-89-3L
Product Description

Product Overview

The SP60P90T8 is a 60V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface-mount device is ideal for applications such as battery switches and DC/DC converters. It offers robust performance with a continuous drain current of -5A and a low on-resistance.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Type: P-Channel MOSFET
  • Package: SOT-89-3L

Technical Specifications

Parameter Symbol Conditions Value Unit
Product Summary
Drain-Source Voltage V(BR)DSS -60 V
On-Resistance (Typical) RDS(on)TYP @-10V 90 m
On-Resistance (Typical) RDS(on)TYP @-4.5V 110 m
Continuous Drain Current ID -5 A
Absolute Maximum Ratings
Drain-Source Voltage VDSS (Ta=25, unless otherwise noted) -60 V
Gate-Source Voltage VGSS (Ta=25, unless otherwise noted) 20 V
Continuous Drain Current ID (Ta=25, unless otherwise noted) -5 A
Pulse Drain Current IDM (Tested, Ta=25, unless otherwise noted) -20 A
Power Dissipation PD (Ta=25, unless otherwise noted) 1 W
Thermal Resistance Junction-to-Ambient RJA (Ta=25, unless otherwise noted) 125 C/W
Storage Temperature Range TSTG (Ta=25, unless otherwise noted) -55 to 150 C
Operating Junction Temperature Range TJ (Ta=25, unless otherwise noted) -55 to 150 C
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=-250A -60 V
Drain-Source Leakage Current IDSS VDS=-48V , VGS=0V - -1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS , ID=-250A -1.0 to -2.2 V
Static Drain-Source On-Resistance RDS(ON) VGS=-10V , ID =-3A 90 to 120 m
Static Drain-Source On-Resistance RDS(ON) VGS=-4.5V , ID =-2.5A 110 to 140 m
Input Capacitance Ciss VDS=-30V , VGS=0V , f=1MHz 960 pF
Output Capacitance Coss VDS=-30V , VGS=0V , f=1MHz 87 pF
Reverse Transfer Capacitance Crss VDS=-30V , VGS=0V , f=1MHz 38 pF
Total Gate Charge Qg VDS=-30V , VGS=-10V , ID=-4A 15.7 nC
Gate-Source Charge Qgs VDS=-30V , VGS=-10V , ID=-4A 3 nC
Gate-Drain Charge Qg VDS=-30V , VGS=-10V , ID=-4A 3.5 nC
Turn-On Delay Time td(on) VDD=-30V VGS=-10V , RG=3 , ID=-5A 9 nS
Turn-On Rise Time tr VDD=-30V VGS=-10V , RG=3 , ID=-5A 11 nS
Turn-Off Delay Time td(off) VDD=-30V VGS=-10V , RG=3 , ID=-5A 25 nS
Turn-Off Fall Time tf VDD=-30V VGS=-10V , RG=3 , ID=-5A 12 nS
Diode Forward Voltage VSD VGS=0V , IS=-1A , TJ=25 -1.2 V
Package Outline (SOT-89-3L)
Symbol Dimensions (Millimeters) Min. Max.
A 1.400 1.600
b 0.320 0.520
b1 0.400 0.580
c 0.350 0.440
D 4.400 4.600
D1 1.550 (REF)
D2 1.750 (REF)
E 2.300 2.600
E1 3.940 4.250
E2 1.900 (REF)
e 1.500 (TYP)
e1 3.000 (TYP)
L 0.900 1.200
45

2504101957_Siliup-SP60P90T8_C41354819.pdf

Related Products
quality Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version factory
Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version
XT ELECTRONICS BZT52C2V4S thru BZT52C43S ZENER DIODEThe XT ELECTRONICS BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose and medium current applications. They are ideally suited for automated assembly processes and are available in lead-free ...
quality Small Signal Zener Diodes Including YANGJIE BZX584C3V9Q for General Purpose Voltage Regulation factory
Small Signal Zener Diodes Including YANGJIE BZX584C3V9Q for General Purpose Voltage Regulation
Small Signal Zener DiodesThe BZX584C2V4Q thru BZX584C47VQ series are small signal Zener diodes designed for general regulation functions. These diodes feature an epoxy casing that meets UL-94 V-0 flammability rating and is halogen-free. They are moisture sensitivity level 1 and AEC-Q101 qualified ...
quality YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages factory
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
quality Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS factory
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.