power management P channel mosfet Slkor SL15P10D featuring split gate trench and low switching loss

Key Attributes
Model Number: SL15P10D
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-
RDS(on):
210mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
340pF@25V
Number:
1 P-Channel
Input Capacitance(Ciss):
3.5nF@25V
Pd - Power Dissipation:
72W
Gate Charge(Qg):
85nC@10V
Mfr. Part #:
SL15P10D
Package:
TO-252
Product Description

Product Overview

The SL15P10D is a -100V/-15A P-Channel MOSFET featuring split gate trench technology. It offers low RDS(on) and FOM, extremely low switching loss, and excellent stability and uniformity. This MOSFET is designed for power management and portable equipment applications.

Product Attributes

  • Brand: SLKORMicro
  • Model: SL15P10D
  • Date: 21 May 2018

Technical Specifications

ParameterSymbolConditionMinTypMaxUnit
Absolute Maximum RatingsVDS-100V
VGS20V
TJ150C
Storage Temperature RangeTSTG-50155C
Diode Continuous Forward CurrentISTc=25C-15A
Pulse Drain CurrentIDMTc=25C-60A
Tested Continuous Drain CurrentIDTc=25C-15A
Single Pulsed Avalanche EnergyEAS72mJ
Maximum Power DissipationPDTc=25C72W
Static Electrical CharacteristicsBV(BR)DSSVGS=0VID=-250A-100V
IDSSVDS=-100VVGS=0V-1.0uA
IGSSVGS=20VVDS=0V100nA
Gate Threshold VoltageVGS(th)VDS=VGSID=-250A-1.0-1.8-3.0V
RDS(on)VGS=-10V ID=-10A105170m
Drain-Source On-State ResistanceRDS(on)VGS=-4.5VID=-5A120210m
Dynamic Electrical CharacteristicsCISS3500pF
COSS480pF
CRSS340pF
Switching CharacteristicsQg85nC
Qgs7nC
Qgd18nC
Switching Characteristicstd(on)VDS=-25VID=-10A VGS=-10VRG=313nS
tr20nS
td(off)22nS
tf11nS
Source- Drain Diode CharacteristicsVSDTj=25Is=-10A-0.8-1.2V

2411121620_Slkor-SL15P10D_C42380658.pdf

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