Low Gate Charge 60V Planar MOSFET Siliup SP3205TQ for Synchronous Rectification and Power Conversion

Key Attributes
Model Number: SP3205TQ
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
110A
Operating Temperature -:
-55℃~+150℃
RDS(on):
7mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Number:
1 N-channel
Reverse Transfer Capacitance (Crss@Vds):
291pF
Output Capacitance(Coss):
772pF
Input Capacitance(Ciss):
3.265nF
Pd - Power Dissipation:
200W
Gate Charge(Qg):
77nC@10V
Mfr. Part #:
SP3205TQ
Package:
TO-220-3L-C
Product Description

Product Overview

The SP3205TQ is a 60V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it ideal for high-frequency switching and synchronous rectification applications, particularly in DC-DC converters. The device is 100% tested for single pulse avalanche energy.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Device Code: SP3205TQ
  • Package: TO-220-3L
  • Material: Planar MOSFET

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS 60 V
RDS(on)Typ @10V 7 m
Continuous Drain Current ID 110 A
Absolute Maximum Ratings
Drain-Source Voltage VDS (Ta=25) 60 V
Gate-Source Voltage VGS (Ta=25) 25 V
Continuous Drain Current ID (TC=25) 110 A
Continuous Drain Current ID (TC=100) 73.3 A
Pulsed Drain Current IDM (Ta=25) 440 A
Single Pulse Avalanche Energy EAS (Ta=25) 870 mJ
Power Dissipation PD (TC=25) 200 W
Thermal Resistance Junction-to-Case RJC (TC=25) 0.625 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 60 - - V
Drain-Source Leakage Current IDSS VDS=48V , VGS=0V , TJ=25 - - 3 uA
Gate-Source Leakage Current IGSS VGS=25V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 2 3 4 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V , ID=20A - 7 10 m
Input Capacitance Ciss VDS=25V , VGS=0V , f=1MHz - 3265 - pF
Output Capacitance Coss VDS=25V , VGS=0V , f=1MHz - 772 - pF
Reverse Transfer Capacitance Crss VDS=25V , VGS=0V , f=1MHz - 291 - pF
Total Gate Charge Qg VDS=44V , VGS=10V , ID=20A - 77 - nC
Gate-Source Charge Qgs VDS=44V , VGS=10V , ID=20A - 11 - nC
Gate-Drain Charge Qgd VDS=44V , VGS=10V , ID=20A - 20 - nC
Turn-On Delay Time Td(on) VDD=28V VGS=10V , RG=4.5, ID=20A - 14 - nS
Rise Time Tr VDD=28V VGS=10V , RG=4.5, ID=20A - 101 - nS
Turn-Off Delay Time Td(off) VDD=28V VGS=10V , RG=4.5, ID=20A - 50 - nS
Fall Time Tf VDD=28V VGS=10V , RG=4.5, ID=20A - 65 - nS
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 110 A
Reverse Recovery Time Trr IS=62A, di/dt=100A/us, TJ=25 - 75 - nS
Reverse Recovery Charge Qrr IS=62A, di/dt=100A/us, TJ=25 - 145 - nC

Package Information (TO-220-3L)

Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 4.400 4.600 0.173 0.181
A1 2.250 2.550 0.089 0.100
b 0.710 0.910 0.028 0.036
b1 1.170 1.370 0.046 0.054
c 0.330 0.650 0.013 0.026
c1 1.200 1.400 0.047 0.055
D 9.910 10.250 0.390 0.404
E 8.950 9.750 0.352 0.384
E1 12.650 13.050 0.498 0.514
e 2.540 TYP. 0.100 TYP.
e1 4.980 5.180 0.196 0.204
F 2.650 2.950 0.104 0.116
H 7.900 8.100 0.311 0.319
h 0.000 0.300 0.000 0.012
L 12.900 13.400 0.508 0.528
L1 2.850 3.250 0.112 0.128
V 6.900 REF. 0.276 REF.
3.400 3.800 0.134 0.150

2504101957_Siliup-SP3205TQ_C42372371.pdf

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