Low Input Capacitance 20V Dual P Channel MOSFET Siliup SP20P50DNQ in PDFN2X2 6L Package for Power Conversion
Key Attributes
Model Number:
SP20P50DNQ
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
50mΩ@4.5V;70mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
700mV
Reverse Transfer Capacitance (Crss@Vds):
55pF
Number:
2 P-Channel
Pd - Power Dissipation:
1.9W
Output Capacitance(Coss):
75pF
Input Capacitance(Ciss):
405pF
Gate Charge(Qg):
3.3nC@2.5V
Mfr. Part #:
SP20P50DNQ
Package:
PDFN-6L(2x2)
Product Description
Product Overview
The SP20P50DNQ is a 20V Dual P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features low on-resistance and low input capacitance, making it suitable for power management functions and DC-DC converters. This device is available in a PDFN2X2-6L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 20P50D
- Package: PDFN2X2-6L
Technical Specifications
| Parameter | Symbol | Conditions | Rating | Unit |
|---|---|---|---|---|
| Product Summary | ||||
| Drain-Source Voltage | V(BR)DSS | -20 | V | |
| On-Resistance (Typical) | RDS(on)TYP | -4.5V | 50 | m |
| On-Resistance (Typical) | RDS(on)TYP | -2.5V | 70 | m |
| Continuous Drain Current | ID | -4 | A | |
| Absolute Maximum Ratings (Ta=25 unless otherwise noted) | ||||
| Drain-Source Voltage | VDS | -20 | V | |
| Gate-Source Voltage | VGS | 12 | V | |
| Continuous Drain Current | ID | -4 | A | |
| Pulsed Drain Current | IDM | -16 | A | |
| Power Dissipation | PD | 1.9 | W | |
| Thermal Resistance Junction-to-Ambient | RJA | 66 | /W | |
| Operating Junction Temperature Range | TSTG | -55 ~+150 | ||
| Storage Temperature Range | TJ | -55 ~+150 | ||
| Electrical Characteristics (TA=25 oC, unless otherwise noted) | ||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -20 | V |
| Drain-Source Leakage Current | IDSS | VDS=-16V , VGS=0V , TJ=25 | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -0.5 ~ -1.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =-4.5V, ID =-4A | 50 ~ 65 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =-2.5V, ID =-2A | 70 ~ 90 | m |
| Dynamic Characteristics | ||||
| Input Capacitance | Ciss | VDS=-10V , VGS=0V , f=1MHz | 405 | pF |
| Output Capacitance | Coss | 75 | pF | |
| Reverse Transfer Capacitance | Crss | 55 | pF | |
| Total Gate Charge | Qg | VDS=-10V , VGS=-2.5V , ID=-3A | 3.3 | nC |
| Gate-Source Charge | Qgs | 0.7 | nC | |
| Gate-Drain Charge | Qg d | 1.3 | nC | |
| Switching Characteristics | ||||
| Turn-On Delay Time | Td(on) | VDD=-10V VGS=-4.5V , RG=1, ID=-1A | 11 | nS |
| Rise Time | Tr | 35 | nS | |
| Turn-Off Delay Time | Td(off) | 30 | nS | |
| Fall Time | Tf | 10 | nS | |
| Diode Characteristics | ||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | 1.2 | V |
| Package Information (PDFN2X2-6L) | ||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. |
| A | 0.700 - 0.800 | 0.028 - 0.031 | ||
| A1 | 0.000 - 0.050 | 0.000 - 0.002 | ||
| A3 | 0.203REF. | 0.008REF. | ||
| D | 1.900 - 2.100 | 0.075 - 0.083 | ||
| E | 1.900 - 2.100 | 0.075 - 0.083 | ||
| D1 | 0.900 - 1.100 | 0.035 - 0.043 | ||
| E1 | 0.520 - 0.720 | 0.020 - 0.028 | ||
| b | 0.250 - 0.350 | 0.010 - 0.014 | ||
| e | 0.650 TYP. | 0.026 TYP. | ||
| k | 0.200 MIN. | 0.008 MIN. | ||
| L | 0.200 - 0.300 | 0.008 - 0.012 | ||
2506271720_Siliup-SP20P50DNQ_C49257244.pdf
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